Magnetotransport and lateral confinement in an InSe van der Waals heterostructure

In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can...

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Main Authors: Lee, Yongjin, Pisoni, Riccardo, Overweg, Hiske, Eich, Marius, Rickhaus, Peter, Patane, Amalia, Kudrynskyi, Zakhar, Kovalyuk, Zakhar D., Gorbachev, Roman, Watanabe, Kenji, Taniguchi, Takashi, Ihn, Thomas, Ensslin, Klaus
Format: Article
Published: IOP Publishing 2018
Online Access:https://eprints.nottingham.ac.uk/52340/
_version_ 1848798705048616960
author Lee, Yongjin
Pisoni, Riccardo
Overweg, Hiske
Eich, Marius
Rickhaus, Peter
Patane, Amalia
Kudrynskyi, Zakhar
Kovalyuk, Zakhar D.
Gorbachev, Roman
Watanabe, Kenji
Taniguchi, Takashi
Ihn, Thomas
Ensslin, Klaus
author_facet Lee, Yongjin
Pisoni, Riccardo
Overweg, Hiske
Eich, Marius
Rickhaus, Peter
Patane, Amalia
Kudrynskyi, Zakhar
Kovalyuk, Zakhar D.
Gorbachev, Roman
Watanabe, Kenji
Taniguchi, Takashi
Ihn, Thomas
Ensslin, Klaus
author_sort Lee, Yongjin
building Nottingham Research Data Repository
collection Online Access
description In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can provide a potential optoelectronic application. Here we present low-temperature transport measurements on a few-layer InSe van der Waals heterostructure with graphene-gated contacts. For high magnetic fields, we observe magnetoresistance minima at even filling factors related to two-fold spin degeneracy. By electrostatic gating with negatively biased split gates, a one-dimensional channel is realized. Close to pinch-off, transport through the constriction is dominated by localized states with charging energies ranging from 2 to 5 meV. This work opens new possibility to explore the low-dimensional physics including quantum point contact and quantum dot.
first_indexed 2025-11-14T20:24:01Z
format Article
id nottingham-52340
institution University of Nottingham Malaysia Campus
institution_category Local University
last_indexed 2025-11-14T20:24:01Z
publishDate 2018
publisher IOP Publishing
recordtype eprints
repository_type Digital Repository
spelling nottingham-523402020-05-04T19:39:58Z https://eprints.nottingham.ac.uk/52340/ Magnetotransport and lateral confinement in an InSe van der Waals heterostructure Lee, Yongjin Pisoni, Riccardo Overweg, Hiske Eich, Marius Rickhaus, Peter Patane, Amalia Kudrynskyi, Zakhar Kovalyuk, Zakhar D. Gorbachev, Roman Watanabe, Kenji Taniguchi, Takashi Ihn, Thomas Ensslin, Klaus In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can provide a potential optoelectronic application. Here we present low-temperature transport measurements on a few-layer InSe van der Waals heterostructure with graphene-gated contacts. For high magnetic fields, we observe magnetoresistance minima at even filling factors related to two-fold spin degeneracy. By electrostatic gating with negatively biased split gates, a one-dimensional channel is realized. Close to pinch-off, transport through the constriction is dominated by localized states with charging energies ranging from 2 to 5 meV. This work opens new possibility to explore the low-dimensional physics including quantum point contact and quantum dot. IOP Publishing 2018-06-08 Article PeerReviewed Lee, Yongjin, Pisoni, Riccardo, Overweg, Hiske, Eich, Marius, Rickhaus, Peter, Patane, Amalia, Kudrynskyi, Zakhar, Kovalyuk, Zakhar D., Gorbachev, Roman, Watanabe, Kenji, Taniguchi, Takashi, Ihn, Thomas and Ensslin, Klaus (2018) Magnetotransport and lateral confinement in an InSe van der Waals heterostructure. 2D Materials . ISSN 2053-1583 http://iopscience.iop.org/article/10.1088/2053-1583/aacb49 doi:10.1088/2053-1583/aacb49 doi:10.1088/2053-1583/aacb49
spellingShingle Lee, Yongjin
Pisoni, Riccardo
Overweg, Hiske
Eich, Marius
Rickhaus, Peter
Patane, Amalia
Kudrynskyi, Zakhar
Kovalyuk, Zakhar D.
Gorbachev, Roman
Watanabe, Kenji
Taniguchi, Takashi
Ihn, Thomas
Ensslin, Klaus
Magnetotransport and lateral confinement in an InSe van der Waals heterostructure
title Magnetotransport and lateral confinement in an InSe van der Waals heterostructure
title_full Magnetotransport and lateral confinement in an InSe van der Waals heterostructure
title_fullStr Magnetotransport and lateral confinement in an InSe van der Waals heterostructure
title_full_unstemmed Magnetotransport and lateral confinement in an InSe van der Waals heterostructure
title_short Magnetotransport and lateral confinement in an InSe van der Waals heterostructure
title_sort magnetotransport and lateral confinement in an inse van der waals heterostructure
url https://eprints.nottingham.ac.uk/52340/
https://eprints.nottingham.ac.uk/52340/
https://eprints.nottingham.ac.uk/52340/