An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode
The planar Gunn diode offers the potential of microwave, milli-metric and THz based oscillator which can be fabricated as part of a microwave monolithic integrated circuit (mmic). To-date the RF output power has been too low for many applications. This paper looks at a simple electrical equivalent c...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2018
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| Online Access: | https://eprints.nottingham.ac.uk/51965/ |
| _version_ | 1848798614961258496 |
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| author | Maricar, Mohamed Ismaeel Khalid, Ata Dunn, Geoff Greedy, Steve Thomas, David W.P. Cumming, D.R.S. Oxley, C.H. |
| author_facet | Maricar, Mohamed Ismaeel Khalid, Ata Dunn, Geoff Greedy, Steve Thomas, David W.P. Cumming, D.R.S. Oxley, C.H. |
| author_sort | Maricar, Mohamed Ismaeel |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | The planar Gunn diode offers the potential of microwave, milli-metric and THz based oscillator which can be fabricated as part of a microwave monolithic integrated circuit (mmic). To-date the RF output power has been too low for many applications. This paper looks at a simple electrical equivalent circuit model representation of an aluminium gallium arsenide (AlGaAs) based planar Gunn diode with an active channel length of approximately 4μm and width of 120μm. The model indicated a maximum RF output power of +5dBm compared with published experimental results of –19dBm for similar diodes. |
| first_indexed | 2025-11-14T20:22:35Z |
| format | Article |
| id | nottingham-51965 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T20:22:35Z |
| publishDate | 2018 |
| publisher | Wiley |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-519652019-05-23T04:30:41Z https://eprints.nottingham.ac.uk/51965/ An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode Maricar, Mohamed Ismaeel Khalid, Ata Dunn, Geoff Greedy, Steve Thomas, David W.P. Cumming, D.R.S. Oxley, C.H. The planar Gunn diode offers the potential of microwave, milli-metric and THz based oscillator which can be fabricated as part of a microwave monolithic integrated circuit (mmic). To-date the RF output power has been too low for many applications. This paper looks at a simple electrical equivalent circuit model representation of an aluminium gallium arsenide (AlGaAs) based planar Gunn diode with an active channel length of approximately 4μm and width of 120μm. The model indicated a maximum RF output power of +5dBm compared with published experimental results of –19dBm for similar diodes. Wiley 2018-04-24 Article PeerReviewed application/pdf en https://eprints.nottingham.ac.uk/51965/1/Gunn%20equivalent%20model%20for%20planar%20%20Gunn%20diode%20FINAL%20VERSION%20%281%29.pdf Maricar, Mohamed Ismaeel, Khalid, Ata, Dunn, Geoff, Greedy, Steve, Thomas, David W.P., Cumming, D.R.S. and Oxley, C.H. (2018) An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode. Microwave and Optical Technology Letters . ISSN 1098-2760 (In Press) GaAs; Planar Gunn diode; Electrical equivalent circuit model; Active channel length; Impedance; RF output power |
| spellingShingle | GaAs; Planar Gunn diode; Electrical equivalent circuit model; Active channel length; Impedance; RF output power Maricar, Mohamed Ismaeel Khalid, Ata Dunn, Geoff Greedy, Steve Thomas, David W.P. Cumming, D.R.S. Oxley, C.H. An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode |
| title | An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode |
| title_full | An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode |
| title_fullStr | An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode |
| title_full_unstemmed | An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode |
| title_short | An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode |
| title_sort | electrical equivalent circuit to simulate the output power of an algaas/gaas planar gunn diode |
| topic | GaAs; Planar Gunn diode; Electrical equivalent circuit model; Active channel length; Impedance; RF output power |
| url | https://eprints.nottingham.ac.uk/51965/ |