Gate-defined quantum confinement in InSe-based van der Waals heterostructures
Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manip...
| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Article |
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American Chemical Society
2018
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| Online Access: | https://eprints.nottingham.ac.uk/51829/ |
| _version_ | 1848798583947526144 |
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| author | Hamer, Matthew James Tovari, Endre Zhu, Mengjian Thompson, Michael Mayorov, Alexander Prance, Jonathon Lee, Yongjin Haley, Richard P. Kudrynskyi, Zakhar R. Patanè, Amalia Terry, Daniel Kovalyuk, Zakhar D. Ensslin, Klaus Kretinin, Andrey V. Geim, Andre Gorbachev, R.V. |
| author_facet | Hamer, Matthew James Tovari, Endre Zhu, Mengjian Thompson, Michael Mayorov, Alexander Prance, Jonathon Lee, Yongjin Haley, Richard P. Kudrynskyi, Zakhar R. Patanè, Amalia Terry, Daniel Kovalyuk, Zakhar D. Ensslin, Klaus Kretinin, Andrey V. Geim, Andre Gorbachev, R.V. |
| author_sort | Hamer, Matthew James |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications. |
| first_indexed | 2025-11-14T20:22:05Z |
| format | Article |
| id | nottingham-51829 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:22:05Z |
| publishDate | 2018 |
| publisher | American Chemical Society |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-518292020-05-04T19:36:39Z https://eprints.nottingham.ac.uk/51829/ Gate-defined quantum confinement in InSe-based van der Waals heterostructures Hamer, Matthew James Tovari, Endre Zhu, Mengjian Thompson, Michael Mayorov, Alexander Prance, Jonathon Lee, Yongjin Haley, Richard P. Kudrynskyi, Zakhar R. Patanè, Amalia Terry, Daniel Kovalyuk, Zakhar D. Ensslin, Klaus Kretinin, Andrey V. Geim, Andre Gorbachev, R.V. Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications. American Chemical Society 2018-05-15 Article PeerReviewed Hamer, Matthew James, Tovari, Endre, Zhu, Mengjian, Thompson, Michael, Mayorov, Alexander, Prance, Jonathon, Lee, Yongjin, Haley, Richard P., Kudrynskyi, Zakhar R., Patanè, Amalia, Terry, Daniel, Kovalyuk, Zakhar D., Ensslin, Klaus, Kretinin, Andrey V., Geim, Andre and Gorbachev, R.V. (2018) Gate-defined quantum confinement in InSe-based van der Waals heterostructures. Nano Letters . ISSN 1530-6992 Two-Dimensional Materials Quantum Dots Quantum Point Contacts Charge Quantization Indium Selenide Electronic Devices https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.8b01376 doi:10.1021/acs.nanolett.8b01376 doi:10.1021/acs.nanolett.8b01376 |
| spellingShingle | Two-Dimensional Materials Quantum Dots Quantum Point Contacts Charge Quantization Indium Selenide Electronic Devices Hamer, Matthew James Tovari, Endre Zhu, Mengjian Thompson, Michael Mayorov, Alexander Prance, Jonathon Lee, Yongjin Haley, Richard P. Kudrynskyi, Zakhar R. Patanè, Amalia Terry, Daniel Kovalyuk, Zakhar D. Ensslin, Klaus Kretinin, Andrey V. Geim, Andre Gorbachev, R.V. Gate-defined quantum confinement in InSe-based van der Waals heterostructures |
| title | Gate-defined quantum confinement in InSe-based van der Waals heterostructures |
| title_full | Gate-defined quantum confinement in InSe-based van der Waals heterostructures |
| title_fullStr | Gate-defined quantum confinement in InSe-based van der Waals heterostructures |
| title_full_unstemmed | Gate-defined quantum confinement in InSe-based van der Waals heterostructures |
| title_short | Gate-defined quantum confinement in InSe-based van der Waals heterostructures |
| title_sort | gate-defined quantum confinement in inse-based van der waals heterostructures |
| topic | Two-Dimensional Materials Quantum Dots Quantum Point Contacts Charge Quantization Indium Selenide Electronic Devices |
| url | https://eprints.nottingham.ac.uk/51829/ https://eprints.nottingham.ac.uk/51829/ https://eprints.nottingham.ac.uk/51829/ |