Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules

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Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules

This paper characterizes thermal and reliability performance of a SiC MOSFET power module with embedded decoupling capacitors and without anti-parallel diodes. Active and passive temperature cycling, supported by transient thermal impedance characterisation and scanning acoustic microscopy, are used...

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Bibliographic Details
Main Authors:	Yang, Li, Agyakwa, Pearl, Corfield, Martin, Johnson, Mark, Harris, Anne, Packwood, Matthew, Paciura, Krzysztof
Format:	Conference or Workshop Item
Language:	English
Published:	2018
Online Access:	https://eprints.nottingham.ac.uk/51806/

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