Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules
This paper characterizes thermal and reliability performance of a SiC MOSFET power module with embedded decoupling capacitors and without anti-parallel diodes. Active and passive temperature cycling, supported by transient thermal impedance characterisation and scanning acoustic microscopy, are used...
| Main Authors: | , , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2018
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| Online Access: | https://eprints.nottingham.ac.uk/51806/ |
| _version_ | 1848798578525339648 |
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| author | Yang, Li Agyakwa, Pearl Corfield, Martin Johnson, Mark Harris, Anne Packwood, Matthew Paciura, Krzysztof |
| author_facet | Yang, Li Agyakwa, Pearl Corfield, Martin Johnson, Mark Harris, Anne Packwood, Matthew Paciura, Krzysztof |
| author_sort | Yang, Li |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | This paper characterizes thermal and reliability performance of a SiC MOSFET power module with embedded decoupling capacitors and without anti-parallel diodes. Active and passive temperature cycling, supported by transient thermal impedance characterisation and scanning acoustic microscopy, are used to evaluate key degradation mechanisms. The forward voltage drop of the body diode is used as a thermo-sensitive electrical parameter to estimate the junction temperature and the thermal structure function is analysed to elucidate the degradation in the heat flow path inside the module. Comparisons are made with commercial Si IGBT power modules. |
| first_indexed | 2025-11-14T20:22:00Z |
| format | Conference or Workshop Item |
| id | nottingham-51806 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T20:22:00Z |
| publishDate | 2018 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-518062020-05-08T09:15:24Z https://eprints.nottingham.ac.uk/51806/ Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules Yang, Li Agyakwa, Pearl Corfield, Martin Johnson, Mark Harris, Anne Packwood, Matthew Paciura, Krzysztof This paper characterizes thermal and reliability performance of a SiC MOSFET power module with embedded decoupling capacitors and without anti-parallel diodes. Active and passive temperature cycling, supported by transient thermal impedance characterisation and scanning acoustic microscopy, are used to evaluate key degradation mechanisms. The forward voltage drop of the body diode is used as a thermo-sensitive electrical parameter to estimate the junction temperature and the thermal structure function is analysed to elucidate the degradation in the heat flow path inside the module. Comparisons are made with commercial Si IGBT power modules. 2018-03-20 Conference or Workshop Item PeerReviewed application/pdf en https://eprints.nottingham.ac.uk/51806/1/CIPS_2018_submission_final.pdf Yang, Li, Agyakwa, Pearl, Corfield, Martin, Johnson, Mark, Harris, Anne, Packwood, Matthew and Paciura, Krzysztof (2018) Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules. In: 10th International Conference on Integrated Power Electronics (CIPS 2018), 20-23 Mar 2018, Stuttgart, Germany. |
| spellingShingle | Yang, Li Agyakwa, Pearl Corfield, Martin Johnson, Mark Harris, Anne Packwood, Matthew Paciura, Krzysztof Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules |
| title | Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules |
| title_full | Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules |
| title_fullStr | Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules |
| title_full_unstemmed | Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules |
| title_short | Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules |
| title_sort | comparison of thermal and reliability performance between a sic mosfet module with embedded decoupling capacitors and commercial si igbt power modules |
| url | https://eprints.nottingham.ac.uk/51806/ |