Comparison of thermal and reliability performance between a SiC MOSFET module with embedded decoupling capacitors and commercial Si IGBT power modules
This paper characterizes thermal and reliability performance of a SiC MOSFET power module with embedded decoupling capacitors and without anti-parallel diodes. Active and passive temperature cycling, supported by transient thermal impedance characterisation and scanning acoustic microscopy, are used...
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Bibliographic Details
| Main Authors: |
Yang, Li,
Agyakwa, Pearl,
Corfield, Martin,
Johnson, Mark,
Harris, Anne,
Packwood, Matthew,
Paciura, Krzysztof |
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| Format: | Conference or Workshop Item
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| Language: | English |
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| Published: |
2018
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| Online Access: | https://eprints.nottingham.ac.uk/51806/
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