Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe
We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different phases of InxSey depending on the position of the s...
| Main Authors: | , , , , , , , |
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| Format: | Article |
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IOP Publishing
2018
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| Online Access: | https://eprints.nottingham.ac.uk/51793/ |
| _version_ | 1848798576263561216 |
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| author | Balakrishnan, Nilanthy Steer, Elisabeth D. Smith, Emily F. Kudrynskyi, Zakhar R. Kovalyuk, Zakhar D. Eaves, Laurence Patanè, Amalia Beton, Peter H. |
| author_facet | Balakrishnan, Nilanthy Steer, Elisabeth D. Smith, Emily F. Kudrynskyi, Zakhar R. Kovalyuk, Zakhar D. Eaves, Laurence Patanè, Amalia Beton, Peter H. |
| author_sort | Balakrishnan, Nilanthy |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different phases of InxSey depending on the position of the substrate within the furnace. The uniform cleaved surface of ε-GaSe enables the epitaxial growth of the InxSey layers, which are aligned over large areas. The InxSey epilayers are characterised using Raman, photoluminescence, X-ray photoelectron and electron dispersive X-ray spectroscopies. Each InxSey phase and stoichiometry exhibits distinct optical and vibrational properties, providing a tuneable photoluminescence emission range from 1.3 eV to ~ 2 eV suitable for exploitation in electronics and optoelectronics. |
| first_indexed | 2025-11-14T20:21:58Z |
| format | Article |
| id | nottingham-51793 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:21:58Z |
| publishDate | 2018 |
| publisher | IOP Publishing |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-517932020-05-04T19:38:31Z https://eprints.nottingham.ac.uk/51793/ Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe Balakrishnan, Nilanthy Steer, Elisabeth D. Smith, Emily F. Kudrynskyi, Zakhar R. Kovalyuk, Zakhar D. Eaves, Laurence Patanè, Amalia Beton, Peter H. We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different phases of InxSey depending on the position of the substrate within the furnace. The uniform cleaved surface of ε-GaSe enables the epitaxial growth of the InxSey layers, which are aligned over large areas. The InxSey epilayers are characterised using Raman, photoluminescence, X-ray photoelectron and electron dispersive X-ray spectroscopies. Each InxSey phase and stoichiometry exhibits distinct optical and vibrational properties, providing a tuneable photoluminescence emission range from 1.3 eV to ~ 2 eV suitable for exploitation in electronics and optoelectronics. IOP Publishing 2018-06-01 Article PeerReviewed Balakrishnan, Nilanthy, Steer, Elisabeth D., Smith, Emily F., Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Eaves, Laurence, Patanè, Amalia and Beton, Peter H. (2018) Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe. 2D Materials, 5 (3). 035026. ISSN 2053-1583 Indium Selenide III-VI van der Waals layered crystals 2D materials physical vapour transport http://iopscience.iop.org/article/10.1088/2053-1583/aac479 doi:10.1088/2053-1583/aac479 doi:10.1088/2053-1583/aac479 |
| spellingShingle | Indium Selenide III-VI van der Waals layered crystals 2D materials physical vapour transport Balakrishnan, Nilanthy Steer, Elisabeth D. Smith, Emily F. Kudrynskyi, Zakhar R. Kovalyuk, Zakhar D. Eaves, Laurence Patanè, Amalia Beton, Peter H. Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe |
| title | Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe |
| title_full | Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe |
| title_fullStr | Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe |
| title_full_unstemmed | Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe |
| title_short | Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe |
| title_sort | epitaxial growth of γ-inse and α, β, and γ-in2se3 on ε-gase |
| topic | Indium Selenide III-VI van der Waals layered crystals 2D materials physical vapour transport |
| url | https://eprints.nottingham.ac.uk/51793/ https://eprints.nottingham.ac.uk/51793/ https://eprints.nottingham.ac.uk/51793/ |