Static and dynamic TSEPs of SiC and GaN transistors

Static and dynamic TSEPs of SiC and GaN transistors

This paper investigates the static and dynamic temperature sensitive electrical parameters (TSEPs) for both SiC and GaN transistors. It is shown that both the qualitative and quantitative temperature characteristics of these parameters are various when different type of transistors are concerned. Th...

Full description

Bibliographic Details
Main Authors: Zhu, Siwei, Fayyaz, Asad, Castellazzi, Alberto
Format: Conference or Workshop Item
Language:English
Published: 2018
Subjects:
SiC MOSFET
GaN HEMT
TSEPs
on-line temperature monitoring
Online Access:https://eprints.nottingham.ac.uk/51429/

Similar Items

Similar Items