Static and dynamic TSEPs of SiC and GaN transistors
This paper investigates the static and dynamic temperature sensitive electrical parameters (TSEPs) for both SiC and GaN transistors. It is shown that both the qualitative and quantitative temperature characteristics of these parameters are various when different type of transistors are concerned. Th...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
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2018
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| Online Access: | https://eprints.nottingham.ac.uk/51429/ |
| _version_ | 1848798493827661824 |
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| author | Zhu, Siwei Fayyaz, Asad Castellazzi, Alberto |
| author_facet | Zhu, Siwei Fayyaz, Asad Castellazzi, Alberto |
| author_sort | Zhu, Siwei |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | This paper investigates the static and dynamic temperature sensitive electrical parameters (TSEPs) for both SiC and GaN transistors. It is shown that both the qualitative and quantitative temperature characteristics of these parameters are various when different type of transistors are concerned. This finding can be used to select the most appropriate temperature sensitive parameter for the device under specific situation. In this paper, two types of transistors, SiC SCT2080KE MOSFET and GaN PGA26E19BA HEMT are evaluated and compared in terms of six TSEPs, including source-drain reverse bias voltage (VSD), static on-resistance (RDS,ON), gate threshold voltage (VGS(TH)), transconductance (gm), dIDS/dt switching transients and gate current (IG). Then, these TSEPs are compared using four criteria: temperature sensitivity, linearity, material and the capability of on-line temperature monitoring |
| first_indexed | 2025-11-14T20:20:39Z |
| format | Conference or Workshop Item |
| id | nottingham-51429 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T20:20:39Z |
| publishDate | 2018 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-514292020-05-08T12:00:19Z https://eprints.nottingham.ac.uk/51429/ Static and dynamic TSEPs of SiC and GaN transistors Zhu, Siwei Fayyaz, Asad Castellazzi, Alberto This paper investigates the static and dynamic temperature sensitive electrical parameters (TSEPs) for both SiC and GaN transistors. It is shown that both the qualitative and quantitative temperature characteristics of these parameters are various when different type of transistors are concerned. This finding can be used to select the most appropriate temperature sensitive parameter for the device under specific situation. In this paper, two types of transistors, SiC SCT2080KE MOSFET and GaN PGA26E19BA HEMT are evaluated and compared in terms of six TSEPs, including source-drain reverse bias voltage (VSD), static on-resistance (RDS,ON), gate threshold voltage (VGS(TH)), transconductance (gm), dIDS/dt switching transients and gate current (IG). Then, these TSEPs are compared using four criteria: temperature sensitivity, linearity, material and the capability of on-line temperature monitoring 2018-04-17 Conference or Workshop Item PeerReviewed application/pdf en https://eprints.nottingham.ac.uk/51429/1/Static%20and%20dynamic%20TSEPs%20of%20SiC%20and%20GaN%20Transistors.pdf Zhu, Siwei, Fayyaz, Asad and Castellazzi, Alberto (2018) Static and dynamic TSEPs of SiC and GaN transistors. In: 9th International Conference on Power Electronics, Machines and Drives (PEMD 2018), 17-19 April 2018, Liverpool, UK. SiC MOSFET GaN HEMT TSEPs on-line temperature monitoring |
| spellingShingle | SiC MOSFET GaN HEMT TSEPs on-line temperature monitoring Zhu, Siwei Fayyaz, Asad Castellazzi, Alberto Static and dynamic TSEPs of SiC and GaN transistors |
| title | Static and dynamic TSEPs of SiC and GaN transistors |
| title_full | Static and dynamic TSEPs of SiC and GaN transistors |
| title_fullStr | Static and dynamic TSEPs of SiC and GaN transistors |
| title_full_unstemmed | Static and dynamic TSEPs of SiC and GaN transistors |
| title_short | Static and dynamic TSEPs of SiC and GaN transistors |
| title_sort | static and dynamic tseps of sic and gan transistors |
| topic | SiC MOSFET GaN HEMT TSEPs on-line temperature monitoring |
| url | https://eprints.nottingham.ac.uk/51429/ |