Novel approaches to the fabrication of nanoscale devices
This thesis describes the effects of a post-growth hydrogenation on as-grown samples and device structures based on III-N-V and III-V semiconductor compounds. The spectral response of quantum wells (QWs) or superlattices (SLs) are tuned by the control dissociation of N-H complexes using a focused la...
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| Format: | Thesis (University of Nottingham only) |
| Language: | English |
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2015
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| Online Access: | https://eprints.nottingham.ac.uk/50598/ |
| _version_ | 1848798292860731392 |
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| author | Balakrishnan, Nilanthy |
| author_facet | Balakrishnan, Nilanthy |
| author_sort | Balakrishnan, Nilanthy |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | This thesis describes the effects of a post-growth hydrogenation on as-grown samples and device structures based on III-N-V and III-V semiconductor compounds. The spectral response of quantum wells (QWs) or superlattices (SLs) are tuned by the control dissociation of N-H complexes using a focused laser beam (photon assisted dissociation) or by thermal annealing. These approaches could be implemented in other materials and heterostructure devices, and offer the advantage of enabling an accurate control of the spectral response of a device using a layer compound with a single N- concentration. A focused laser beam is also used to diffuse hydrogen from the p-type contact layer towards the III-N-V superlattice in the intrinsic region of a p-i-n diode, thus creating preferential injection paths for the carriers and creating nanoscale light emitting diodes. Opportunities for realizing a movable micron size-light emitting diode (-LED) are also demonstrated.
Moreover, room temperature electroluminescence from semiconductor junctions formed from combinations of n-InSe, p-InSe, p-GaSe and n-In2O3 is demonstrated. These p-n junctions are fabricated using mechanical exfoliation of Bridgman-grown crystals and a simple mechanical contact method or thermal annealing. These results demonstrate the technological potential of mechanically formed heterojunctions and homojunctions of direct band gap layered GaSe and InSe compounds with an optical response over an extended wavelength range, from the near-infrared to the visible spectrum. These layered crystals could be combined in different sequences of layer stacking, thus offering exciting opportunities for new structures and devices. |
| first_indexed | 2025-11-14T20:17:28Z |
| format | Thesis (University of Nottingham only) |
| id | nottingham-50598 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T20:17:28Z |
| publishDate | 2015 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-505982025-02-28T14:03:13Z https://eprints.nottingham.ac.uk/50598/ Novel approaches to the fabrication of nanoscale devices Balakrishnan, Nilanthy This thesis describes the effects of a post-growth hydrogenation on as-grown samples and device structures based on III-N-V and III-V semiconductor compounds. The spectral response of quantum wells (QWs) or superlattices (SLs) are tuned by the control dissociation of N-H complexes using a focused laser beam (photon assisted dissociation) or by thermal annealing. These approaches could be implemented in other materials and heterostructure devices, and offer the advantage of enabling an accurate control of the spectral response of a device using a layer compound with a single N- concentration. A focused laser beam is also used to diffuse hydrogen from the p-type contact layer towards the III-N-V superlattice in the intrinsic region of a p-i-n diode, thus creating preferential injection paths for the carriers and creating nanoscale light emitting diodes. Opportunities for realizing a movable micron size-light emitting diode (-LED) are also demonstrated. Moreover, room temperature electroluminescence from semiconductor junctions formed from combinations of n-InSe, p-InSe, p-GaSe and n-In2O3 is demonstrated. These p-n junctions are fabricated using mechanical exfoliation of Bridgman-grown crystals and a simple mechanical contact method or thermal annealing. These results demonstrate the technological potential of mechanically formed heterojunctions and homojunctions of direct band gap layered GaSe and InSe compounds with an optical response over an extended wavelength range, from the near-infrared to the visible spectrum. These layered crystals could be combined in different sequences of layer stacking, thus offering exciting opportunities for new structures and devices. 2015-07-07 Thesis (University of Nottingham only) NonPeerReviewed application/pdf en arr https://eprints.nottingham.ac.uk/50598/1/PhD%20Thesis-Nilanthy%20Balakrishnan.pdf Balakrishnan, Nilanthy (2015) Novel approaches to the fabrication of nanoscale devices. PhD thesis, The University of Nottingham. Dilute Nitrides III-N-V semiconductors Laser writing III-VI chalcogenide van der Waals crystals |
| spellingShingle | Dilute Nitrides III-N-V semiconductors Laser writing III-VI chalcogenide van der Waals crystals Balakrishnan, Nilanthy Novel approaches to the fabrication of nanoscale devices |
| title | Novel approaches to the fabrication of nanoscale devices |
| title_full | Novel approaches to the fabrication of nanoscale devices |
| title_fullStr | Novel approaches to the fabrication of nanoscale devices |
| title_full_unstemmed | Novel approaches to the fabrication of nanoscale devices |
| title_short | Novel approaches to the fabrication of nanoscale devices |
| title_sort | novel approaches to the fabrication of nanoscale devices |
| topic | Dilute Nitrides III-N-V semiconductors Laser writing III-VI chalcogenide van der Waals crystals |
| url | https://eprints.nottingham.ac.uk/50598/ |