Design and development of a high-density, high-speed
10 kV SiC MOSFET module

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Design and development of a high-density, high-speed 10 kV SiC MOSFET module

High-density packaging of fast-switching power semiconductors typically requires low parasitic inductance, high heat extraction, and high thermo-mechanical reliability. High-density packaging of high-voltage power semiconductors, such as 10 kV SiC MOSFETs, also requires low electric field concentrat...

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Bibliographic Details
Main Authors:	Di Marino, Christina, Boroyevich, Dushan, Burgos, Rolando, Johnson, Christopher Mark, Lu, G.-Q.
Format:	Conference or Workshop Item
Published:	2017
Subjects:	Silicon Carbide (SiC) Packaging High power density systems High voltage power converters MOSFET
Online Access:	https://eprints.nottingham.ac.uk/49286/

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