Design and development of a high-density, high-speed 10 kV SiC MOSFET module
High-density packaging of fast-switching power semiconductors typically requires low parasitic inductance, high heat extraction, and high thermo-mechanical reliability. High-density packaging of high-voltage power semiconductors, such as 10 kV SiC MOSFETs, also requires low electric field concentrat...
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2017
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| Online Access: | https://eprints.nottingham.ac.uk/49286/ |
| _version_ | 1848797964795904000 |
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| author | Di Marino, Christina Boroyevich, Dushan Burgos, Rolando Johnson, Christopher Mark Lu, G.-Q. |
| author_facet | Di Marino, Christina Boroyevich, Dushan Burgos, Rolando Johnson, Christopher Mark Lu, G.-Q. |
| author_sort | Di Marino, Christina |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | High-density packaging of fast-switching power semiconductors typically requires low parasitic inductance, high heat extraction, and high thermo-mechanical reliability. High-density packaging of high-voltage power semiconductors, such as 10 kV SiC MOSFETs, also requires low electric field concentration in order to prevent premature dielectric breakdown. Consequently, in addition to the usual electromagnetic, thermal, and mechanical analyses, the electric fields must also be evaluated. This is the first detailed report on the optimization of a high-voltage SiC MOSFET power module. |
| first_indexed | 2025-11-14T20:12:15Z |
| format | Conference or Workshop Item |
| id | nottingham-49286 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:12:15Z |
| publishDate | 2017 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-492862020-05-04T19:05:31Z https://eprints.nottingham.ac.uk/49286/ Design and development of a high-density, high-speed 10 kV SiC MOSFET module Di Marino, Christina Boroyevich, Dushan Burgos, Rolando Johnson, Christopher Mark Lu, G.-Q. High-density packaging of fast-switching power semiconductors typically requires low parasitic inductance, high heat extraction, and high thermo-mechanical reliability. High-density packaging of high-voltage power semiconductors, such as 10 kV SiC MOSFETs, also requires low electric field concentration in order to prevent premature dielectric breakdown. Consequently, in addition to the usual electromagnetic, thermal, and mechanical analyses, the electric fields must also be evaluated. This is the first detailed report on the optimization of a high-voltage SiC MOSFET power module. 2017-09-11 Conference or Workshop Item PeerReviewed Di Marino, Christina, Boroyevich, Dushan, Burgos, Rolando, Johnson, Christopher Mark and Lu, G.-Q. (2017) Design and development of a high-density, high-speed 10 kV SiC MOSFET module. In: 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), 11-14 Sept 2017, Warsaw, Poland. Silicon Carbide (SiC) Packaging High power density systems High voltage power converters MOSFET http://ieeexplore.ieee.org/document/8099109/ |
| spellingShingle | Silicon Carbide (SiC) Packaging High power density systems High voltage power converters MOSFET Di Marino, Christina Boroyevich, Dushan Burgos, Rolando Johnson, Christopher Mark Lu, G.-Q. Design and development of a high-density, high-speed 10 kV SiC MOSFET module |
| title | Design and development of a high-density, high-speed
10 kV SiC MOSFET module |
| title_full | Design and development of a high-density, high-speed
10 kV SiC MOSFET module |
| title_fullStr | Design and development of a high-density, high-speed
10 kV SiC MOSFET module |
| title_full_unstemmed | Design and development of a high-density, high-speed
10 kV SiC MOSFET module |
| title_short | Design and development of a high-density, high-speed
10 kV SiC MOSFET module |
| title_sort | design and development of a high-density, high-speed
10 kv sic mosfet module |
| topic | Silicon Carbide (SiC) Packaging High power density systems High voltage power converters MOSFET |
| url | https://eprints.nottingham.ac.uk/49286/ https://eprints.nottingham.ac.uk/49286/ |