Performance and robustness characterisation of SiC power MOSFETs

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Performance and robustness characterisation of SiC power MOSFETs

Over the last few years, significant advancements in the SiC power MOSFET fabrication technology has led to their wide commercial availability from various manufacturers. As a result, they have now transitioned from being a research activity to becoming an industrial reality. SiC power MOSFET techno...

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Bibliographic Details
Main Author:	Fayyaz, Asad
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2018
Subjects:	Wide bandgap Silicon Carbide Short Circuit Avalanche Breakdown Power MOSFET
Online Access:	https://eprints.nottingham.ac.uk/48937/

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