Lattice-matched epitaxial graphene grown on boron nitride

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Lattice-matched epitaxial graphene grown on boron nitride

Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band-gap but requires the formation of highly strained material and has not hitherto been realised. We demonstrate that aligned, lattice-matched graphene can be grown by molecular beam epitaxy using substra...

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Bibliographic Details
Main Authors:	Davies, Andrew, Albar, J.D., Summerfield, Alex, Thomas, James C., Cheng, Tin S., Korolkov, Vladimir V., Stapleton, Emily, Wrigley, James, Goodey, Nathan L., Mellor, Christopher J., Khlobystov, Andrei N., Watanabe, Kenji, Taniguchi, Takashi, Foxon, C.T., Eaves, Laurence, Novikov, Sergei V., Beton, Peter H.
Format:	Article
Published:	American Chemical Society 2018
Subjects:	graphene; boron nitride; growth; strain; band-gap; epitaxy
Online Access:	https://eprints.nottingham.ac.uk/48740/

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