Optical detection and spatial modulation of mid-infrared surface plasmon polaritons in a highly doped semiconductor

Optical detection and spatial modulation of mid-infrared surface plasmon polaritons in a highly doped semiconductor

Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid-infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Post-growth hydrogenation of In(AsN) creates a highly conducting channel near t...

Full description

Bibliographic Details
Main Authors: Di Paola, D.M., Velichko, Anton V., Bomers, Mario, Balakrishnan, Nilanthy, Makarovsky, Oleg, Capizzi, Mario, Cerutti, Laurent, Baranov, Alexei N., Kesaria, M., Krier, A., Taliercio, Thierry, Patanè, Amalia
Format: Article
Published: Wiley 2018
Subjects:
plasmonics
semiconductors
InAs
mid-infrared
hydrogen
Online Access:https://eprints.nottingham.ac.uk/48246/
Description
Summary:Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid-infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Post-growth hydrogenation of In(AsN) creates a highly conducting channel near the surface and a surface plasmon polariton detected by attenuated total reflection techniques. The suppression of plasmonic effects following a photo-annealing of the semiconductor is attributed to the dissociation of the N-H bond. This offers new routes for direct patterning of MIR plasmonic structures by laser writing.

Similar Items