Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi

We report terahertz optical conductivity measurements of the highly mismatched alloy, GaNBi. We find that in these amorphous GaNBi epilayers grown using plasma assisted molecular beam epitaxy, the optical conductivity is enhanced in the samples grown at higher gallium beam equivalent pressure (BEP)....

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Main Authors: Vaisakh, C.P., Foxon, C.T., Novikov, Sergei V., Kini, R.N.
Format: Article
Published: IOP Publishing 2017
Subjects:
Online Access:https://eprints.nottingham.ac.uk/47933/
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author Vaisakh, C.P.
Foxon, C.T.
Novikov, Sergei V.
Kini, R.N.
author_facet Vaisakh, C.P.
Foxon, C.T.
Novikov, Sergei V.
Kini, R.N.
author_sort Vaisakh, C.P.
building Nottingham Research Data Repository
collection Online Access
description We report terahertz optical conductivity measurements of the highly mismatched alloy, GaNBi. We find that in these amorphous GaNBi epilayers grown using plasma assisted molecular beam epitaxy, the optical conductivity is enhanced in the samples grown at higher gallium beam equivalent pressure (BEP). The optical conductivity spectra in these pseudo-amorphous epilayers follow a Drude–Smith behaviour due to charge confinement effects. The direct current conductivity in the epilayers grown at the highest Ga BEP (3.1 × 10−7 Torr) show an increase of three orders of magnitude compared to the one grown at the lowest Ga BEP (2.0 × 10−7 Torr). Our measurements suggests a percolative transition from an insulating nature in the GaNBi epilayers grown at low Ga BEP to a highly conducting phase in the epilayers grown at high Ga BEP.
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spelling nottingham-479332020-05-04T19:14:57Z https://eprints.nottingham.ac.uk/47933/ Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi Vaisakh, C.P. Foxon, C.T. Novikov, Sergei V. Kini, R.N. We report terahertz optical conductivity measurements of the highly mismatched alloy, GaNBi. We find that in these amorphous GaNBi epilayers grown using plasma assisted molecular beam epitaxy, the optical conductivity is enhanced in the samples grown at higher gallium beam equivalent pressure (BEP). The optical conductivity spectra in these pseudo-amorphous epilayers follow a Drude–Smith behaviour due to charge confinement effects. The direct current conductivity in the epilayers grown at the highest Ga BEP (3.1 × 10−7 Torr) show an increase of three orders of magnitude compared to the one grown at the lowest Ga BEP (2.0 × 10−7 Torr). Our measurements suggests a percolative transition from an insulating nature in the GaNBi epilayers grown at low Ga BEP to a highly conducting phase in the epilayers grown at high Ga BEP. IOP Publishing 2017-10-31 Article PeerReviewed Vaisakh, C.P., Foxon, C.T., Novikov, Sergei V. and Kini, R.N. (2017) Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi. Semiconductor Science and Technology, 32 (12). 125009/1-125009/6. ISSN 1361-6641 Dilute bismides; Terahertz spectroscopy; Percolation conductivity https://doi.org/10.1088/1361-6641/aa9288 doi:10.1088/1361-6641/aa9288 doi:10.1088/1361-6641/aa9288
spellingShingle Dilute bismides; Terahertz spectroscopy; Percolation conductivity
Vaisakh, C.P.
Foxon, C.T.
Novikov, Sergei V.
Kini, R.N.
Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi
title Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi
title_full Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi
title_fullStr Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi
title_full_unstemmed Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi
title_short Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi
title_sort terahertz conductivity of the highly mismatched amorphous alloy, ganbi
topic Dilute bismides; Terahertz spectroscopy; Percolation conductivity
url https://eprints.nottingham.ac.uk/47933/
https://eprints.nottingham.ac.uk/47933/
https://eprints.nottingham.ac.uk/47933/