Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High-Index GaAs Planes
We report on the structural and optical properties of Ga₁₋ᵪ Mn ᵪ As-AlAs quantum wells (QWs) with χ=0.1% grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates with orientations (100), (110), (311)B and (411)B. Atomic force microscopy (AFM), X-ray diffraction (XRD) and photolumines...
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| Format: | Article |
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Indian Academy of Sciences
2017
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| Online Access: | https://eprints.nottingham.ac.uk/47832/ |
| _version_ | 1848797640669528064 |
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| author | Gunes, Mustafa Gumus, Cebrail Galvao Gobato, Y. Henini, M. |
| author_facet | Gunes, Mustafa Gumus, Cebrail Galvao Gobato, Y. Henini, M. |
| author_sort | Gunes, Mustafa |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | We report on the structural and optical properties of Ga₁₋ᵪ Mn ᵪ As-AlAs quantum wells (QWs) with χ=0.1% grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates with orientations (100), (110), (311)B and (411)B. Atomic force microscopy (AFM), X-ray diffraction (XRD) and photoluminescence (PL) techniques were used to investigate these QWs. AFM results have evidenced the formation of Mn-induced islands, which are randomly distributed on the surface. These islands tend to segregate for samples grown on (110) and (411)B planes, while no clear segregation was observed for samples grown on (100) and (311)B orientations. Results show that the PL line width increases with Mn segregation. XRD measurements were used to determine 2θ,d and cell parameters. |
| first_indexed | 2025-11-14T20:07:06Z |
| format | Article |
| id | nottingham-47832 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:07:06Z |
| publishDate | 2017 |
| publisher | Indian Academy of Sciences |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-478322020-05-04T19:14:40Z https://eprints.nottingham.ac.uk/47832/ Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High-Index GaAs Planes Gunes, Mustafa Gumus, Cebrail Galvao Gobato, Y. Henini, M. We report on the structural and optical properties of Ga₁₋ᵪ Mn ᵪ As-AlAs quantum wells (QWs) with χ=0.1% grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates with orientations (100), (110), (311)B and (411)B. Atomic force microscopy (AFM), X-ray diffraction (XRD) and photoluminescence (PL) techniques were used to investigate these QWs. AFM results have evidenced the formation of Mn-induced islands, which are randomly distributed on the surface. These islands tend to segregate for samples grown on (110) and (411)B planes, while no clear segregation was observed for samples grown on (100) and (311)B orientations. Results show that the PL line width increases with Mn segregation. XRD measurements were used to determine 2θ,d and cell parameters. Indian Academy of Sciences 2017-10-31 Article PeerReviewed Gunes, Mustafa, Gumus, Cebrail, Galvao Gobato, Y. and Henini, M. (2017) Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High-Index GaAs Planes. Bulletin of Materials Science . ISSN 0973-7669 AFM MBE photoluminescence XRD quantum well GaMnAs https://link.springer.com/article/10.1007%2Fs12034-017-1487-9 doi:10.1007/s12034-017-1487-9 doi:10.1007/s12034-017-1487-9 |
| spellingShingle | AFM MBE photoluminescence XRD quantum well GaMnAs Gunes, Mustafa Gumus, Cebrail Galvao Gobato, Y. Henini, M. Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High-Index GaAs Planes |
| title | Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High-Index GaAs Planes |
| title_full | Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High-Index GaAs Planes |
| title_fullStr | Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High-Index GaAs Planes |
| title_full_unstemmed | Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High-Index GaAs Planes |
| title_short | Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High-Index GaAs Planes |
| title_sort | structural and optical properties of diluted magnetic ga1−xmnxas–alas quantum wells grown on high-index gaas planes |
| topic | AFM MBE photoluminescence XRD quantum well GaMnAs |
| url | https://eprints.nottingham.ac.uk/47832/ https://eprints.nottingham.ac.uk/47832/ https://eprints.nottingham.ac.uk/47832/ |