Experimental study of the short-circuit performance
for a 600V normally-off p-gate GaN HEMT

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Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT

In this paper, the short-circuit robustness of a normally off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of failure. Here, however, the relevance of the specific...

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Bibliographic Details
Main Authors:	Oeder, Thorsten, Castellazzi, Alberto, Pfost, Martin
Format:	Conference or Workshop Item
Published:	Institute of Electrical and Electronics Engineers 2017
Subjects:	Short-Circuit GaN HEMT Normally-Off p-Gate Gate-Bias Dependence
Online Access:	https://eprints.nottingham.ac.uk/47539/

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