Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT
In this paper, the short-circuit robustness of a normally off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of failure. Here, however, the relevance of the specific...
| Main Authors: | , , |
|---|---|
| Format: | Conference or Workshop Item |
| Published: |
Institute of Electrical and Electronics Engineers
2017
|
| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/47539/ |
| _version_ | 1848797570683371520 |
|---|---|
| author | Oeder, Thorsten Castellazzi, Alberto Pfost, Martin |
| author_facet | Oeder, Thorsten Castellazzi, Alberto Pfost, Martin |
| author_sort | Oeder, Thorsten |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | In this paper, the short-circuit robustness of a normally off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of failure. Here, however, the relevance of the specific gate-drive circuit design and corresponding device operational condtions is demonstrated. A gate-bias dependence (GBD) of the failure, correlated to the applied drain-source voltage, is introduced as a novel specific feature for the p-Gate type device. |
| first_indexed | 2025-11-14T20:05:59Z |
| format | Conference or Workshop Item |
| id | nottingham-47539 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:05:59Z |
| publishDate | 2017 |
| publisher | Institute of Electrical and Electronics Engineers |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-475392020-05-04T18:56:55Z https://eprints.nottingham.ac.uk/47539/ Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT Oeder, Thorsten Castellazzi, Alberto Pfost, Martin In this paper, the short-circuit robustness of a normally off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of failure. Here, however, the relevance of the specific gate-drive circuit design and corresponding device operational condtions is demonstrated. A gate-bias dependence (GBD) of the failure, correlated to the applied drain-source voltage, is introduced as a novel specific feature for the p-Gate type device. Institute of Electrical and Electronics Engineers 2017-07-24 Conference or Workshop Item PeerReviewed Oeder, Thorsten, Castellazzi, Alberto and Pfost, Martin (2017) Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT. In: 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017, 28 May-1 Jun 2017, Sapporo, Japan. Short-Circuit GaN HEMT Normally-Off p-Gate Gate-Bias Dependence http://ieeexplore.ieee.org/document/7988925/ |
| spellingShingle | Short-Circuit GaN HEMT Normally-Off p-Gate Gate-Bias Dependence Oeder, Thorsten Castellazzi, Alberto Pfost, Martin Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT |
| title | Experimental study of the short-circuit performance
for a 600V normally-off p-gate GaN HEMT |
| title_full | Experimental study of the short-circuit performance
for a 600V normally-off p-gate GaN HEMT |
| title_fullStr | Experimental study of the short-circuit performance
for a 600V normally-off p-gate GaN HEMT |
| title_full_unstemmed | Experimental study of the short-circuit performance
for a 600V normally-off p-gate GaN HEMT |
| title_short | Experimental study of the short-circuit performance
for a 600V normally-off p-gate GaN HEMT |
| title_sort | experimental study of the short-circuit performance
for a 600v normally-off p-gate gan hemt |
| topic | Short-Circuit GaN HEMT Normally-Off p-Gate Gate-Bias Dependence |
| url | https://eprints.nottingham.ac.uk/47539/ https://eprints.nottingham.ac.uk/47539/ |