Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT
In this paper, the short-circuit robustness of a normally off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of failure. Here, however, the relevance of the specific...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
Institute of Electrical and Electronics Engineers
2017
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/47539/ |
| Summary: | In this paper, the short-circuit robustness of a normally off GaN HEMT is investigated in relation to applied bias conditions and pulse duration. The results align with previous studies on normally-on devices in highlighting an electrical type of failure. Here, however, the relevance of the specific gate-drive circuit design and corresponding device operational condtions is demonstrated. A gate-bias dependence (GBD) of the failure, correlated to the applied drain-source voltage, is introduced as a novel specific feature for the p-Gate type device. |
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