Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool
Using virtual prototyping (VP) design tool to eval¬uate power converter electro-thermal performance can help designers to validate prototype in a quick way. However, different system time-scale requires efficient electro-thermal simulation techniques. Thus, an approach by using average power losses...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
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IEEE
2017
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| Online Access: | https://eprints.nottingham.ac.uk/46563/ |
| _version_ | 1848797355382407168 |
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| author | Li, Ke Evans, Paul Johnson, Christopher Mark |
| author_facet | Li, Ke Evans, Paul Johnson, Christopher Mark |
| author_sort | Li, Ke |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Using virtual prototyping (VP) design tool to eval¬uate power converter electro-thermal performance can help designers to validate prototype in a quick way. However, different system time-scale requires efficient electro-thermal simulation techniques. Thus, an approach by using average power losses of one switching cycle is presented in the paper to decouple electrical and thermal simulation so as to evaluate the influence of the parasitic inductance on device junction temperature quickly. This approach is validated by comparing with a method to obtain device junction temperature by using instantaneous power losses. By implementing it in the VP design tool, where a SiC-MOSFET behavioural model is developed and validated, it is shown the parasitic inductance influence on power converter electro-thermal waveforms. Thus, designers can evaluate power converter electro-thermal performance more quickly than other commercial software. |
| first_indexed | 2025-11-14T20:02:34Z |
| format | Conference or Workshop Item |
| id | nottingham-46563 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:02:34Z |
| publishDate | 2017 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-465632020-05-04T19:01:40Z https://eprints.nottingham.ac.uk/46563/ Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool Li, Ke Evans, Paul Johnson, Christopher Mark Using virtual prototyping (VP) design tool to eval¬uate power converter electro-thermal performance can help designers to validate prototype in a quick way. However, different system time-scale requires efficient electro-thermal simulation techniques. Thus, an approach by using average power losses of one switching cycle is presented in the paper to decouple electrical and thermal simulation so as to evaluate the influence of the parasitic inductance on device junction temperature quickly. This approach is validated by comparing with a method to obtain device junction temperature by using instantaneous power losses. By implementing it in the VP design tool, where a SiC-MOSFET behavioural model is developed and validated, it is shown the parasitic inductance influence on power converter electro-thermal waveforms. Thus, designers can evaluate power converter electro-thermal performance more quickly than other commercial software. IEEE 2017-08-21 Conference or Workshop Item PeerReviewed Li, Ke, Evans, Paul and Johnson, Christopher Mark (2017) Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool. In: IEEE COMPEL 2017, 9-12 Jul 2017, Stanford, California, USA. Virtual prototyping; Multi time-scale; Electro-thermal simulation; SiC-MOSFET; Parasitic inductance; Switching losses http://ieeexplore.ieee.org/document/8013278/ |
| spellingShingle | Virtual prototyping; Multi time-scale; Electro-thermal simulation; SiC-MOSFET; Parasitic inductance; Switching losses Li, Ke Evans, Paul Johnson, Christopher Mark Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool |
| title | Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool |
| title_full | Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool |
| title_fullStr | Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool |
| title_full_unstemmed | Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool |
| title_short | Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool |
| title_sort | using multi time-scale electro-thermal simulation approach to evaluate sic-mosfet power c=converter in virtual prototyping design tool |
| topic | Virtual prototyping; Multi time-scale; Electro-thermal simulation; SiC-MOSFET; Parasitic inductance; Switching losses |
| url | https://eprints.nottingham.ac.uk/46563/ https://eprints.nottingham.ac.uk/46563/ |