Transient out-of-SOA robustness of SiC power MOSFETs

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Transient out-of-SOA robustness of SiC power MOSFETs

Beyond their main function of high-frequency switches in modulated power converters, solid-state power devices are required in many application domains to also ensure robustness against a number of overload operational conditions. This paper considers the specific case of 1200 V SiC power MOSFETs an...

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Bibliographic Details
Main Authors:	Castellazzi, Alberto, Fayyaz, Asad, Romano, Gianpaolo, Riccio, Michele, Irace, Andrea, Urresti-Ibanez, Jesus, Wright, Nick
Format:	Conference or Workshop Item
Published:	2017
Subjects:	Power MOSFET Robustness Semiconductor Device Reliability Silicon Carbide Wide Band Gap Semiconductors
Online Access:	https://eprints.nottingham.ac.uk/46554/

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