Transient out-of-SOA robustness of SiC power MOSFETs
Beyond their main function of high-frequency switches in modulated power converters, solid-state power devices are required in many application domains to also ensure robustness against a number of overload operational conditions. This paper considers the specific case of 1200 V SiC power MOSFETs an...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Published: |
2017
|
| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/46554/ |
| _version_ | 1848797353735094272 |
|---|---|
| author | Castellazzi, Alberto Fayyaz, Asad Romano, Gianpaolo Riccio, Michele Irace, Andrea Urresti-Ibanez, Jesus Wright, Nick |
| author_facet | Castellazzi, Alberto Fayyaz, Asad Romano, Gianpaolo Riccio, Michele Irace, Andrea Urresti-Ibanez, Jesus Wright, Nick |
| author_sort | Castellazzi, Alberto |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Beyond their main function of high-frequency switches in modulated power converters, solid-state power devices are required in many application domains to also ensure robustness against a number of overload operational conditions. This paper considers the specific case of 1200 V SiC power MOSFETs and analyses their performance under three main transient regimes at the edge of and out of their Safe Operating Area: unclamped inductive switching led avalanche breakdown; short-circuit; operation as current limiting and regulating devices. The results presented highlight both inherent major strengths of SiC over Si and areas for improvement by tailored device design. The paper aims to contribute useful indications for technology development in future device generations to better match widespread and varied application requirements. |
| first_indexed | 2025-11-14T20:02:32Z |
| format | Conference or Workshop Item |
| id | nottingham-46554 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:02:32Z |
| publishDate | 2017 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-465542020-05-04T18:40:41Z https://eprints.nottingham.ac.uk/46554/ Transient out-of-SOA robustness of SiC power MOSFETs Castellazzi, Alberto Fayyaz, Asad Romano, Gianpaolo Riccio, Michele Irace, Andrea Urresti-Ibanez, Jesus Wright, Nick Beyond their main function of high-frequency switches in modulated power converters, solid-state power devices are required in many application domains to also ensure robustness against a number of overload operational conditions. This paper considers the specific case of 1200 V SiC power MOSFETs and analyses their performance under three main transient regimes at the edge of and out of their Safe Operating Area: unclamped inductive switching led avalanche breakdown; short-circuit; operation as current limiting and regulating devices. The results presented highlight both inherent major strengths of SiC over Si and areas for improvement by tailored device design. The paper aims to contribute useful indications for technology development in future device generations to better match widespread and varied application requirements. 2017-04-04 Conference or Workshop Item PeerReviewed Castellazzi, Alberto, Fayyaz, Asad, Romano, Gianpaolo, Riccio, Michele, Irace, Andrea, Urresti-Ibanez, Jesus and Wright, Nick (2017) Transient out-of-SOA robustness of SiC power MOSFETs. In: 2017 IEEE International Reliability Physics Symposium (IRPS 2017), 2-6 Apr 2017, Monterey, California, USA. Power MOSFET Robustness Semiconductor Device Reliability Silicon Carbide Wide Band Gap Semiconductors http://ieeexplore.ieee.org/document/7936255/ |
| spellingShingle | Power MOSFET Robustness Semiconductor Device Reliability Silicon Carbide Wide Band Gap Semiconductors Castellazzi, Alberto Fayyaz, Asad Romano, Gianpaolo Riccio, Michele Irace, Andrea Urresti-Ibanez, Jesus Wright, Nick Transient out-of-SOA robustness of SiC power MOSFETs |
| title | Transient out-of-SOA robustness of SiC power MOSFETs |
| title_full | Transient out-of-SOA robustness of SiC power MOSFETs |
| title_fullStr | Transient out-of-SOA robustness of SiC power MOSFETs |
| title_full_unstemmed | Transient out-of-SOA robustness of SiC power MOSFETs |
| title_short | Transient out-of-SOA robustness of SiC power MOSFETs |
| title_sort | transient out-of-soa robustness of sic power mosfets |
| topic | Power MOSFET Robustness Semiconductor Device Reliability Silicon Carbide Wide Band Gap Semiconductors |
| url | https://eprints.nottingham.ac.uk/46554/ https://eprints.nottingham.ac.uk/46554/ |