Triazine-based graphitic carbon nitride: a two-dimensional semiconductor
Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reactio...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
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Wiley-VCH Verlag
2014
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| Online Access: | https://eprints.nottingham.ac.uk/45580/ |
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| author | Siller-Algara, Gerardo Severin, Nikolai Chong, Samantha Y. Björkman, Torbjörn Palgrave, Robert G. Laybourn, Andrea Antonietti, Markus Khimyak, Yaroslav Z. Krasheninnikov, Arkady V. Rabe, Jürgen P. Kaiser, Ute Cooper, Andrew I. Thomas, Arne Bojdys, Michael J. |
| author_facet | Siller-Algara, Gerardo Severin, Nikolai Chong, Samantha Y. Björkman, Torbjörn Palgrave, Robert G. Laybourn, Andrea Antonietti, Markus Khimyak, Yaroslav Z. Krasheninnikov, Arkady V. Rabe, Jürgen P. Kaiser, Ute Cooper, Andrew I. Thomas, Arne Bojdys, Michael J. |
| author_sort | Siller-Algara, Gerardo |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes. |
| first_indexed | 2025-11-14T19:59:27Z |
| format | Article |
| id | nottingham-45580 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:59:27Z |
| publishDate | 2014 |
| publisher | Wiley-VCH Verlag |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-455802020-05-04T16:51:11Z https://eprints.nottingham.ac.uk/45580/ Triazine-based graphitic carbon nitride: a two-dimensional semiconductor Siller-Algara, Gerardo Severin, Nikolai Chong, Samantha Y. Björkman, Torbjörn Palgrave, Robert G. Laybourn, Andrea Antonietti, Markus Khimyak, Yaroslav Z. Krasheninnikov, Arkady V. Rabe, Jürgen P. Kaiser, Ute Cooper, Andrew I. Thomas, Arne Bojdys, Michael J. Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes. Wiley-VCH Verlag 2014-07-14 Article PeerReviewed Siller-Algara, Gerardo, Severin, Nikolai, Chong, Samantha Y., Björkman, Torbjörn, Palgrave, Robert G., Laybourn, Andrea, Antonietti, Markus, Khimyak, Yaroslav Z., Krasheninnikov, Arkady V., Rabe, Jürgen P., Kaiser, Ute, Cooper, Andrew I., Thomas, Arne and Bojdys, Michael J. (2014) Triazine-based graphitic carbon nitride: a two-dimensional semiconductor. Angewandte Chemie International Edition, 53 (29). pp. 7540-7455. ISSN 1521-3773 http://onlinelibrary.wiley.com/doi/10.1002/anie.201402191/abstract doi:10.1002/anie.201402191 doi:10.1002/anie.201402191 |
| spellingShingle | Siller-Algara, Gerardo Severin, Nikolai Chong, Samantha Y. Björkman, Torbjörn Palgrave, Robert G. Laybourn, Andrea Antonietti, Markus Khimyak, Yaroslav Z. Krasheninnikov, Arkady V. Rabe, Jürgen P. Kaiser, Ute Cooper, Andrew I. Thomas, Arne Bojdys, Michael J. Triazine-based graphitic carbon nitride: a two-dimensional semiconductor |
| title | Triazine-based graphitic carbon nitride: a two-dimensional semiconductor |
| title_full | Triazine-based graphitic carbon nitride: a two-dimensional semiconductor |
| title_fullStr | Triazine-based graphitic carbon nitride: a two-dimensional semiconductor |
| title_full_unstemmed | Triazine-based graphitic carbon nitride: a two-dimensional semiconductor |
| title_short | Triazine-based graphitic carbon nitride: a two-dimensional semiconductor |
| title_sort | triazine-based graphitic carbon nitride: a two-dimensional semiconductor |
| url | https://eprints.nottingham.ac.uk/45580/ https://eprints.nottingham.ac.uk/45580/ https://eprints.nottingham.ac.uk/45580/ |