Electrical and thermal failure modes of 600 V p-gate GaN HEMTs

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Electrical and thermal failure modes of 600 V p-gate GaN HEMTs

A study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations. The electrical failure mode seems to be an electrical field breakdown in the structure which is caused by excessive carrier concentration, rather...

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Bibliographic Details
Main Authors:	Oeder, Thorsten, Castellazzi, Alberto, Pfost, Martin
Format:	Article
Published:	Elsevier 2017
Subjects:	Gallium nitride (GaN) High electron mobility transistor (HEMT) P-doped gate (p-gate) Short-circuit Safe operating area Electrical failure Thermal failure
Online Access:	https://eprints.nottingham.ac.uk/45148/

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