Electrical and thermal failure modes of 600 V p-gate GaN HEMTs
A study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations. The electrical failure mode seems to be an electrical field breakdown in the structure which is caused by excessive carrier concentration, rather...
| Main Authors: | , , |
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| Format: | Article |
| Published: |
Elsevier
2017
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/45148/ |