Electrical and thermal failure modes of 600 V p-gate GaN HEMTs
A study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations. The electrical failure mode seems to be an electrical field breakdown in the structure which is caused by excessive carrier concentration, rather...
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| Format: | Article |
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Elsevier
2017
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| Online Access: | https://eprints.nottingham.ac.uk/45148/ |
| _version_ | 1848797079132962816 |
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| author | Oeder, Thorsten Castellazzi, Alberto Pfost, Martin |
| author_facet | Oeder, Thorsten Castellazzi, Alberto Pfost, Martin |
| author_sort | Oeder, Thorsten |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | A study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations. The electrical failure mode seems to be an electrical field breakdown in the structure which is caused by excessive carrier concentration, rather than primary thermal generated. Accordingly, a thermal failure mode is observed, which features a distinctive behaviour and seems to be similar to schottky-gate HEMTs. Concerning the electrical failure mode, a specific p-gate HEMT short-circuit safe operating area (SCSOA) is presented as a novelty. However, a short-circuit capability of up to 520 V can be achieved, regarding the design of the gate-drive circuit. |
| first_indexed | 2025-11-14T19:58:10Z |
| format | Article |
| id | nottingham-45148 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:58:10Z |
| publishDate | 2017 |
| publisher | Elsevier |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-451482020-05-04T19:55:51Z https://eprints.nottingham.ac.uk/45148/ Electrical and thermal failure modes of 600 V p-gate GaN HEMTs Oeder, Thorsten Castellazzi, Alberto Pfost, Martin A study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations. The electrical failure mode seems to be an electrical field breakdown in the structure which is caused by excessive carrier concentration, rather than primary thermal generated. Accordingly, a thermal failure mode is observed, which features a distinctive behaviour and seems to be similar to schottky-gate HEMTs. Concerning the electrical failure mode, a specific p-gate HEMT short-circuit safe operating area (SCSOA) is presented as a novelty. However, a short-circuit capability of up to 520 V can be achieved, regarding the design of the gate-drive circuit. Elsevier 2017-09 Article PeerReviewed Oeder, Thorsten, Castellazzi, Alberto and Pfost, Martin (2017) Electrical and thermal failure modes of 600 V p-gate GaN HEMTs. Microelectronics Reliability, 76-77 . pp. 321-326. ISSN 0026-2714 Gallium nitride (GaN) High electron mobility transistor (HEMT) P-doped gate (p-gate) Short-circuit Safe operating area Electrical failure Thermal failure http://www.sciencedirect.com/science/article/pii/S0026271417302342 doi:10.1016/j.microrel.2017.06.046 doi:10.1016/j.microrel.2017.06.046 |
| spellingShingle | Gallium nitride (GaN) High electron mobility transistor (HEMT) P-doped gate (p-gate) Short-circuit Safe operating area Electrical failure Thermal failure Oeder, Thorsten Castellazzi, Alberto Pfost, Martin Electrical and thermal failure modes of 600 V p-gate GaN HEMTs |
| title | Electrical and thermal failure modes of 600 V p-gate GaN HEMTs |
| title_full | Electrical and thermal failure modes of 600 V p-gate GaN HEMTs |
| title_fullStr | Electrical and thermal failure modes of 600 V p-gate GaN HEMTs |
| title_full_unstemmed | Electrical and thermal failure modes of 600 V p-gate GaN HEMTs |
| title_short | Electrical and thermal failure modes of 600 V p-gate GaN HEMTs |
| title_sort | electrical and thermal failure modes of 600 v p-gate gan hemts |
| topic | Gallium nitride (GaN) High electron mobility transistor (HEMT) P-doped gate (p-gate) Short-circuit Safe operating area Electrical failure Thermal failure |
| url | https://eprints.nottingham.ac.uk/45148/ https://eprints.nottingham.ac.uk/45148/ https://eprints.nottingham.ac.uk/45148/ |