Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

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Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. Recent experiments have demonstrated that relativistic spin-orbit torques can provide the means for...

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Bibliographic Details
Main Authors:	Olejnik, K., Schuler, V., Marti, X., Novák, V., Kaspar, Z., Wadley, P., Campion, R.P., Edmonds, K.W., Gallagher, B.L., Garces, J., Baumgartner, M., Gambardella, P., Jungwirth, T.
Format:	Article
Published:	Nature Publishing Group 2017
Online Access:	https://eprints.nottingham.ac.uk/44161/

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