Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots
We report a simultaneous increase of carrier concentration, mobility and photoresponsivity when SiC-grown graphene is decorated with a surface layer of colloidal PbS quantum dots, which act as electron donors. The charge on the ionised dots is spatially correlated with defect charges on the SiC-grap...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Published: |
IOP Publishing
2017
|
| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/43417/ |
| _version_ | 1848796683425546240 |
|---|---|
| author | Makarovsky, Oleg Turyanska, Lyudmila Mori, N. Greenaway, Mark Eaves, Laurence Patanè, Amalia Fromhold, Mark Lara-Avila, Samuel Kubatkin, Sergey Yakimova, Rositsa |
| author_facet | Makarovsky, Oleg Turyanska, Lyudmila Mori, N. Greenaway, Mark Eaves, Laurence Patanè, Amalia Fromhold, Mark Lara-Avila, Samuel Kubatkin, Sergey Yakimova, Rositsa |
| author_sort | Makarovsky, Oleg |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | We report a simultaneous increase of carrier concentration, mobility and photoresponsivity when SiC-grown graphene is decorated with a surface layer of colloidal PbS quantum dots, which act as electron donors. The charge on the ionised dots is spatially correlated with defect charges on the SiC-graphene interface, thus enhancing both electron carrier density and mobility. This charge-correlation model is supported by Monte Carlo simulations of electron transport and used to explain the unexpected 3-fold increase of mobility with increasing electron density. The enhanced carrier concentration and mobility give rise to Shubnikov-de Haas oscillations in the magnetoresistance, which provide an estimate of the electron cyclotron mass in graphene at high densities and Fermi energies up to 1.2 × 1013 cm-2 and 400 meV, respectively. |
| first_indexed | 2025-11-14T19:51:53Z |
| format | Article |
| id | nottingham-43417 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:51:53Z |
| publishDate | 2017 |
| publisher | IOP Publishing |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-434172020-05-04T18:50:46Z https://eprints.nottingham.ac.uk/43417/ Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots Makarovsky, Oleg Turyanska, Lyudmila Mori, N. Greenaway, Mark Eaves, Laurence Patanè, Amalia Fromhold, Mark Lara-Avila, Samuel Kubatkin, Sergey Yakimova, Rositsa We report a simultaneous increase of carrier concentration, mobility and photoresponsivity when SiC-grown graphene is decorated with a surface layer of colloidal PbS quantum dots, which act as electron donors. The charge on the ionised dots is spatially correlated with defect charges on the SiC-graphene interface, thus enhancing both electron carrier density and mobility. This charge-correlation model is supported by Monte Carlo simulations of electron transport and used to explain the unexpected 3-fold increase of mobility with increasing electron density. The enhanced carrier concentration and mobility give rise to Shubnikov-de Haas oscillations in the magnetoresistance, which provide an estimate of the electron cyclotron mass in graphene at high densities and Fermi energies up to 1.2 × 1013 cm-2 and 400 meV, respectively. IOP Publishing 2017-06-19 Article PeerReviewed Makarovsky, Oleg, Turyanska, Lyudmila, Mori, N., Greenaway, Mark, Eaves, Laurence, Patanè, Amalia, Fromhold, Mark, Lara-Avila, Samuel, Kubatkin, Sergey and Yakimova, Rositsa (2017) Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots. 2D Materials, 4 (3). 031001. ISSN 2053-1583 SiC-graphene Unipolar charge correlation Colloidal quantum dots Monte Carlo simulations http://iopscience.iop.org/article/10.1088/2053-1583/aa76bb/meta doi:10.1088/2053-1583/aa76bb doi:10.1088/2053-1583/aa76bb |
| spellingShingle | SiC-graphene Unipolar charge correlation Colloidal quantum dots Monte Carlo simulations Makarovsky, Oleg Turyanska, Lyudmila Mori, N. Greenaway, Mark Eaves, Laurence Patanè, Amalia Fromhold, Mark Lara-Avila, Samuel Kubatkin, Sergey Yakimova, Rositsa Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots |
| title | Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots |
| title_full | Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots |
| title_fullStr | Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots |
| title_full_unstemmed | Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots |
| title_short | Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots |
| title_sort | enhancing optoelectronic properties of sic-grown graphene by a surface layer of colloidal quantum dots |
| topic | SiC-graphene Unipolar charge correlation Colloidal quantum dots Monte Carlo simulations |
| url | https://eprints.nottingham.ac.uk/43417/ https://eprints.nottingham.ac.uk/43417/ https://eprints.nottingham.ac.uk/43417/ |