Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures
The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for high performance opto-electronic devices such as photodetectors and light sources. Here we report on the fabrication and electronic properties of vdW heter...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
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IOP Publishing
2017
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| Online Access: | https://eprints.nottingham.ac.uk/43032/ |
| _version_ | 1848796627628720128 |
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| author | Yan, Faguang Zhao, Lixia Patanè, Amalia Hu, Ping'an Wei, Xia Luo, Wengang Zhang, Dong Lv, Quanshan Feng, Qi Shen, Chao Chang, Kai Eaves, Laurence Wang, Kaiyou |
| author_facet | Yan, Faguang Zhao, Lixia Patanè, Amalia Hu, Ping'an Wei, Xia Luo, Wengang Zhang, Dong Lv, Quanshan Feng, Qi Shen, Chao Chang, Kai Eaves, Laurence Wang, Kaiyou |
| author_sort | Yan, Faguang |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for high performance opto-electronic devices such as photodetectors and light sources. Here we report on the fabrication and electronic properties of vdW heterojunction diodes composed of the direct band gap layered semiconductors InSe and GaSe and transparent monolayer graphene electrodes. We show that the type II band alignment between the two layered materials and their distinctive spectral response, combined with the short channel length and low electrical resistance of graphene electrodes, enable efficient generation and extraction of photoexcited carriers from the heterostructure even when no external voltage is applied. Our devices are fast ( ~ 1 μs), self-driven photodetectors with multicolor photoresponse ranging from the ultraviolet to the near-infrared and offer new routes to miniaturized optoelectronics beyond present semiconductor materials and technologies. |
| first_indexed | 2025-11-14T19:50:59Z |
| format | Article |
| id | nottingham-43032 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:50:59Z |
| publishDate | 2017 |
| publisher | IOP Publishing |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-430322020-05-04T18:46:36Z https://eprints.nottingham.ac.uk/43032/ Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures Yan, Faguang Zhao, Lixia Patanè, Amalia Hu, Ping'an Wei, Xia Luo, Wengang Zhang, Dong Lv, Quanshan Feng, Qi Shen, Chao Chang, Kai Eaves, Laurence Wang, Kaiyou The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for high performance opto-electronic devices such as photodetectors and light sources. Here we report on the fabrication and electronic properties of vdW heterojunction diodes composed of the direct band gap layered semiconductors InSe and GaSe and transparent monolayer graphene electrodes. We show that the type II band alignment between the two layered materials and their distinctive spectral response, combined with the short channel length and low electrical resistance of graphene electrodes, enable efficient generation and extraction of photoexcited carriers from the heterostructure even when no external voltage is applied. Our devices are fast ( ~ 1 μs), self-driven photodetectors with multicolor photoresponse ranging from the ultraviolet to the near-infrared and offer new routes to miniaturized optoelectronics beyond present semiconductor materials and technologies. IOP Publishing 2017-05-22 Article PeerReviewed Yan, Faguang, Zhao, Lixia, Patanè, Amalia, Hu, Ping'an, Wei, Xia, Luo, Wengang, Zhang, Dong, Lv, Quanshan, Feng, Qi, Shen, Chao, Chang, Kai, Eaves, Laurence and Wang, Kaiyou (2017) Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures. Nanotechnology . ISSN 1361-6528 Multicolor gallium selenide indium selenide van der Waals heterostructure built-in potential http://iopscience.iop.org/article/10.1088/1361-6528/aa749e doi:10.1088/1361-6528/aa749e doi:10.1088/1361-6528/aa749e |
| spellingShingle | Multicolor gallium selenide indium selenide van der Waals heterostructure built-in potential Yan, Faguang Zhao, Lixia Patanè, Amalia Hu, Ping'an Wei, Xia Luo, Wengang Zhang, Dong Lv, Quanshan Feng, Qi Shen, Chao Chang, Kai Eaves, Laurence Wang, Kaiyou Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures |
| title | Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures |
| title_full | Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures |
| title_fullStr | Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures |
| title_full_unstemmed | Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures |
| title_short | Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures |
| title_sort | fast, multicolor photodetection with graphene-contacted p-gase/n-inse van der waals heterostructures |
| topic | Multicolor gallium selenide indium selenide van der Waals heterostructure built-in potential |
| url | https://eprints.nottingham.ac.uk/43032/ https://eprints.nottingham.ac.uk/43032/ https://eprints.nottingham.ac.uk/43032/ |