Growth of free-standing wurtzite AlGaN by MBE using a highly efficient RF plasma source

QR Code

Growth of free-standing wurtzite AlGaN by MBE using a highly efficient RF plasma source

Ultraviolet light emitting diodes (UV LEDs) are now being developed for various potential applications including water purification, surface decontamination, optical sensing, and solid-state lighting. The basis for this development is the successful production of AlxGa1_xN UV LEDs grown by either me...

Full description

Bibliographic Details
Main Authors:	Novikov, Sergei V., Staddon, Chris R., Whale, Josh, Kent, Anthony J., Foxon, C. Thomas
Format:	Article
Published:	AIP 2016
Online Access:	https://eprints.nottingham.ac.uk/42171/

Similar Items

Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources
by: Novikov, Sergei V., et al.
Published: (2017)

Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source
by: Novikov, Sergei V., et al.
Published: (2016)

Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source
by: Novikov, Sergei V., et al.
Published: (2016)

Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN
by: Novikov, Sergei V., et al.
Published: (2017)

Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs
by: Fay, Mike W., et al.
Published: (2008)

Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux
by: Han, Y., et al.
Published: (2005)

Photoelastic properties of zinc-blende (AlGa)N in the UV: picosecond ultrasonic studies
by: Whale, Josh, et al.
Published: (2018)

AlGaN/GaN-based biosensor for label-free detection of biological activity
by: Podolska, Anna, et al.
Published: (2013)

Rf-Mbe Growth Of Iii-Nitrides Heterostructures For Light Detecting Applications
by: Mohd Yusoff, Mohd Zaki
Published: (2016)

X-ray detection with zinc-blende (cubic) GaN Schottky diodes
by: Gohil, T., et al.
Published: (2016)

Biocompatibility of semiconducting AlGaN/GaN material with living cells
by: Podolska, Anna, et al.
Published: (2012)

PA-MBE GaN-Based Optoelectronics on Silicon Substrates
by: Chuah , Lee Siang
Published: (2009)

RF-MBE Grown III-Nitrides Heterostructures For Hydrogen Gas Sensing Applications
by: CHIN, CHE WOEI
Published: (2017)

TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2003)

Optical properties of nanostructured semiconductors grown by MBE on non-conventional GaAs substrates
by: Khatab, Almontaser bellah Fathy
Published: (2014)

The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
by: Mohamad, Mazuina, et al.
Published: (2008)

Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures
by: Kocan, M., et al.
Published: (2008)

Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices
by: Podolska, Anna, et al.
Published: (2010)

High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire
by: Cheng, Tin S., et al.
Published: (2016)

Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi
by: Vaisakh, C.P., et al.
Published: (2017)

Anharmonic phonon decay in cubic GaN
by: Cuscó, R., et al.
Published: (2015)

Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour
by: Khir, F.L.M., et al.
Published: (2014)

Nitrate ion detection using AlGaN/GaN heterostructure-based devices without a reference electrode
by: Myers, M, et al.
Published: (2013)

Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure HEMT structure
by: Maneea Eizadi Sharifabad,, et al.
Published: (2011)

Influence Of Molarity And Time Of Potassium Hydroxide Etching On Al-Rich AlGaN Layer
by: Yusuf, Yusnizam, et al.
Published: (2020)

The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.
by: C, W Chin, et al.
Published: (2007)

Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2001)

Ion-selective membrane-integrated water-gated AlGaN/GaN HEMT for high-stability detection of agricultural herbicides
by: Firdaus, Amirul, et al.
Published: (2025)

Growth And Characterization Of AlGaN Thin Films Via Sol-gel Spin Coating Method
by: Isa, Nurul Atikah Mohd, et al.
Published: (2016)

Infrared optical responses of wurtzite InxGa1 − xN thin films with porous surface morphology
by: Yew, P., et al.
Published: (2016)

Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content
by: Fay, Mike W., et al.
Published: (2008)

Surface reaction of undoped AlGaN/GaN HEMT based two terminal device in H+ and OH- ion-contained aqueous solution
by: Mastura Shafinaz Zainal Abidin,, et al.
Published: (2013)

TEM assessment of As-doped GaN epitaxial layers grown on sapphire
by: Fay, Mike W., et al.
Published: (2004)

Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy
by: Fay, Mike W., et al.
Published: (2005)

On the wurtzite to tetragonal phase transformation in ZnO nanowires
by: Wang, J., et al.
Published: (2017)

Graduan diseru Majukan Negara Dengan Aspirasi MBE
by: Universiti Putra Malaysia, Bahagian Komunikasi Korporat
Published: (2010)

Quantum confinement of excitons in wurtzite InP nanowires
by: Pemasiri, K, et al.
Published: (2015)

Effect Of Nucleation Time With Tmal Preflow Assistance On Reducing Dislocation Density Of Aln Layer For AlGaN-Based UVC LED
by: Samsudin, M. E. A., et al.
Published: (2020)

Plasma polymerization. IV. A systematic investigation of the inductively coupled RF plasma polymerization of pentafluorobenzene
by: Clark, D. T., et al.
Published: (1981)

MBE growth, characterisation and physics of antiferromagnetic copper manganese arsenide
by: Hills, Victoria Anne
Published: (2016)