Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy

Bibliographic Details
Main Authors: Vuong, T.Q.P., Cassabois, G., Valvin, P., Rousseau, E., Summerfield, A., Mellor, C.J., Cho, Y., Cheng, T.S., Albar, J.D., Eaves, Laurence, Foxon, C.T., Beton, Peter H., Novikov, Sergei V., Gil, B.
Format: Article
Published: IOP Publishing 2017
Subjects:
Online Access:https://eprints.nottingham.ac.uk/41839/
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author Vuong, T.Q.P.
Cassabois, G.
Valvin, P.
Rousseau, E.
Summerfield, A.
Mellor, C.J.
Cho, Y.
Cheng, T.S.
Albar, J.D.
Eaves, Laurence
Foxon, C.T.
Beton, Peter H.
Novikov, Sergei V.
Gil, B.
author_facet Vuong, T.Q.P.
Cassabois, G.
Valvin, P.
Rousseau, E.
Summerfield, A.
Mellor, C.J.
Cho, Y.
Cheng, T.S.
Albar, J.D.
Eaves, Laurence
Foxon, C.T.
Beton, Peter H.
Novikov, Sergei V.
Gil, B.
author_sort Vuong, T.Q.P.
building Nottingham Research Data Repository
collection Online Access
first_indexed 2025-11-14T19:46:49Z
format Article
id nottingham-41839
institution University of Nottingham Malaysia Campus
institution_category Local University
last_indexed 2025-11-14T19:46:49Z
publishDate 2017
publisher IOP Publishing
recordtype eprints
repository_type Digital Repository
spelling nottingham-418392020-05-04T18:37:57Z https://eprints.nottingham.ac.uk/41839/ Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy Vuong, T.Q.P. Cassabois, G. Valvin, P. Rousseau, E. Summerfield, A. Mellor, C.J. Cho, Y. Cheng, T.S. Albar, J.D. Eaves, Laurence Foxon, C.T. Beton, Peter H. Novikov, Sergei V. Gil, B. IOP Publishing 2017-03-17 Article PeerReviewed Vuong, T.Q.P., Cassabois, G., Valvin, P., Rousseau, E., Summerfield, A., Mellor, C.J., Cho, Y., Cheng, T.S., Albar, J.D., Eaves, Laurence, Foxon, C.T., Beton, Peter H., Novikov, Sergei V. and Gil, B. (2017) Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy. 2D Materials, 4 (2). 021023/1-021023/7. ISSN 2053-1583 boron nitride molecular beam epitaxy deep ultraviolet http://iopscience.iop.org/article/10.1088/2053-1583/aa604a/meta;jsessionid=6F6C9A708463CD7291EC35FABB54FA9E.c2.iopscience.cld.iop.org doi:10.1088/2053-1583/aa604a doi:10.1088/2053-1583/aa604a
spellingShingle boron nitride
molecular beam epitaxy
deep ultraviolet
Vuong, T.Q.P.
Cassabois, G.
Valvin, P.
Rousseau, E.
Summerfield, A.
Mellor, C.J.
Cho, Y.
Cheng, T.S.
Albar, J.D.
Eaves, Laurence
Foxon, C.T.
Beton, Peter H.
Novikov, Sergei V.
Gil, B.
Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy
title Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy
title_full Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy
title_fullStr Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy
title_full_unstemmed Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy
title_short Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy
title_sort deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy
topic boron nitride
molecular beam epitaxy
deep ultraviolet
url https://eprints.nottingham.ac.uk/41839/
https://eprints.nottingham.ac.uk/41839/
https://eprints.nottingham.ac.uk/41839/