Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior
Insulated gate bipolar transistor (IGBT) modules, which can fail to stable short-circuit mode, have major applications in electricity network-related fields. Sn-3.5Ag solder joints and sintered Ag joints for the die attachment and Mo, Cu, Sn-3.5Ag, Al, and Ag foils for the top side insert (TSI) mate...
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| Format: | Article |
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Institute of Electrical and Electronics Engineers
2017
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| Online Access: | https://eprints.nottingham.ac.uk/41475/ |
| _version_ | 1848796282459521024 |
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| author | Li, Jianfeng Yaqub, Imran Corfield, Martin Johnson, Christopher Mark |
| author_facet | Li, Jianfeng Yaqub, Imran Corfield, Martin Johnson, Christopher Mark |
| author_sort | Li, Jianfeng |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Insulated gate bipolar transistor (IGBT) modules, which can fail to stable short-circuit mode, have major applications in electricity network-related fields. Sn-3.5Ag solder joints and sintered Ag joints for the die attachment and Mo, Cu, Sn-3.5Ag, Al, and Ag foils for the top side insert (TSI) material in press pack like single IGBT samples have been investigated using overcurrent and current passage tests. The results reveal that Sn-3.5Ag solder joints in combination with Sn-3.5Ag, Al, or Ag foils can be employed to achieve stable short-circuit failure mode, where the best results are achieved with Ag foils. This can be attributed to the formation of conductive networks/channels through the failed IGBT and good alignment between the residual TSI material and the failed IGBT. |
| first_indexed | 2025-11-14T19:45:30Z |
| format | Article |
| id | nottingham-41475 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:45:30Z |
| publishDate | 2017 |
| publisher | Institute of Electrical and Electronics Engineers |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-414752020-05-04T18:41:03Z https://eprints.nottingham.ac.uk/41475/ Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior Li, Jianfeng Yaqub, Imran Corfield, Martin Johnson, Christopher Mark Insulated gate bipolar transistor (IGBT) modules, which can fail to stable short-circuit mode, have major applications in electricity network-related fields. Sn-3.5Ag solder joints and sintered Ag joints for the die attachment and Mo, Cu, Sn-3.5Ag, Al, and Ag foils for the top side insert (TSI) material in press pack like single IGBT samples have been investigated using overcurrent and current passage tests. The results reveal that Sn-3.5Ag solder joints in combination with Sn-3.5Ag, Al, or Ag foils can be employed to achieve stable short-circuit failure mode, where the best results are achieved with Ag foils. This can be attributed to the formation of conductive networks/channels through the failed IGBT and good alignment between the residual TSI material and the failed IGBT. Institute of Electrical and Electronics Engineers 2017-04-06 Article PeerReviewed Li, Jianfeng, Yaqub, Imran, Corfield, Martin and Johnson, Christopher Mark (2017) Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior. IEEE Transactions on Components, Packaging, and Manufacturing Technology, 7 (5). pp. 734-744. ISSN 2156-3950 Electronics packaging Failure to short circuit Finite element analysis Overcurrent failure Power module Scanning electronic microscopy Semiconductor device packaging http://ieeexplore.ieee.org/document/7893799/ doi:10.1109/TCPMT.2017.2683202 doi:10.1109/TCPMT.2017.2683202 |
| spellingShingle | Electronics packaging Failure to short circuit Finite element analysis Overcurrent failure Power module Scanning electronic microscopy Semiconductor device packaging Li, Jianfeng Yaqub, Imran Corfield, Martin Johnson, Christopher Mark Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior |
| title | Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior |
| title_full | Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior |
| title_fullStr | Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior |
| title_full_unstemmed | Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior |
| title_short | Interconnect materials enabling IGBT modules to achieve stable short circuit failure behavior |
| title_sort | interconnect materials enabling igbt modules to achieve stable short circuit failure behavior |
| topic | Electronics packaging Failure to short circuit Finite element analysis Overcurrent failure Power module Scanning electronic microscopy Semiconductor device packaging |
| url | https://eprints.nottingham.ac.uk/41475/ https://eprints.nottingham.ac.uk/41475/ https://eprints.nottingham.ac.uk/41475/ |