Temperature and thickness dependence of tunneling anisotropic
magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks

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Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks

Weinvestigate the thickness and temperature dependence of a series of Ni0.8Fe0.2/Ir0.2Mn0.8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specif...

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Bibliographic Details
Main Authors:	Reichlová, H., Novák, V., Kurosaki, Y., Yamada, M., Yamamoto, H., Nishide, A., Hayakawa, J., Takahashi, H., Marysko, M., Wunderlich, J., Marti, X., Jungwirth, T.
Format:	Article
Published:	IOP Publishing 2016
Online Access:	https://eprints.nottingham.ac.uk/40287/

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