Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks
Weinvestigate the thickness and temperature dependence of a series of Ni0.8Fe0.2/Ir0.2Mn0.8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specif...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
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IOP Publishing
2016
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| Online Access: | https://eprints.nottingham.ac.uk/40287/ |
| _version_ | 1848796025424183296 |
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| author | Reichlová, H. Novák, V. Kurosaki, Y. Yamada, M. Yamamoto, H. Nishide, A. Hayakawa, J. Takahashi, H. Marysko, M. Wunderlich, J. Marti, X. Jungwirth, T. |
| author_facet | Reichlová, H. Novák, V. Kurosaki, Y. Yamada, M. Yamamoto, H. Nishide, A. Hayakawa, J. Takahashi, H. Marysko, M. Wunderlich, J. Marti, X. Jungwirth, T. |
| author_sort | Reichlová, H. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Weinvestigate the thickness and temperature dependence of a series of Ni0.8Fe0.2/Ir0.2Mn0.8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of tFM tAFM lead to four distinct scenarios with specific electric responses to moderate magnetic fields. The characteristic dependence of the measured TAMR signal on applied voltage allows us to confirm its persistence up to room temperature despite an overlapped contribution by a thermal magnetic noise. |
| first_indexed | 2025-11-14T19:41:25Z |
| format | Article |
| id | nottingham-40287 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:41:25Z |
| publishDate | 2016 |
| publisher | IOP Publishing |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-402872020-05-04T18:00:02Z https://eprints.nottingham.ac.uk/40287/ Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks Reichlová, H. Novák, V. Kurosaki, Y. Yamada, M. Yamamoto, H. Nishide, A. Hayakawa, J. Takahashi, H. Marysko, M. Wunderlich, J. Marti, X. Jungwirth, T. Weinvestigate the thickness and temperature dependence of a series of Ni0.8Fe0.2/Ir0.2Mn0.8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of tFM tAFM lead to four distinct scenarios with specific electric responses to moderate magnetic fields. The characteristic dependence of the measured TAMR signal on applied voltage allows us to confirm its persistence up to room temperature despite an overlapped contribution by a thermal magnetic noise. IOP Publishing 2016-07-22 Article NonPeerReviewed Reichlová, H., Novák, V., Kurosaki, Y., Yamada, M., Yamamoto, H., Nishide, A., Hayakawa, J., Takahashi, H., Marysko, M., Wunderlich, J., Marti, X. and Jungwirth, T. (2016) Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks. Materials Research Express, 3 . 076406/1-076406/5. ISSN 2053-1591 http://iopscience.iop.org/article/10.1088/2053-1591/3/7/076406/meta;jsessionid=9ACC60B336A138B815D1FB1C12360B94.ip-10-40-1-105 doi:10.1088/2053-1591/3/7/076406 doi:10.1088/2053-1591/3/7/076406 |
| spellingShingle | Reichlová, H. Novák, V. Kurosaki, Y. Yamada, M. Yamamoto, H. Nishide, A. Hayakawa, J. Takahashi, H. Marysko, M. Wunderlich, J. Marti, X. Jungwirth, T. Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks |
| title | Temperature and thickness dependence of tunneling anisotropic
magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks |
| title_full | Temperature and thickness dependence of tunneling anisotropic
magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks |
| title_fullStr | Temperature and thickness dependence of tunneling anisotropic
magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks |
| title_full_unstemmed | Temperature and thickness dependence of tunneling anisotropic
magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks |
| title_short | Temperature and thickness dependence of tunneling anisotropic
magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks |
| title_sort | temperature and thickness dependence of tunneling anisotropic
magnetoresistance in exchange-biased py/irmn/mgo/ta stacks |
| url | https://eprints.nottingham.ac.uk/40287/ https://eprints.nottingham.ac.uk/40287/ https://eprints.nottingham.ac.uk/40287/ |