Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe
Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
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Nature Publishing Group
2016
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| Online Access: | https://eprints.nottingham.ac.uk/40283/ |
| _version_ | 1848796024320032768 |
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| author | Kriegner, D. Výborný, K. Olejnik, K. Reichlová, H. Novák, V. Marti, X. Gazquez, J. Saidl, V. Němec, P. Volobuev, V.V. Springholz, G. Holy, Vaclav Jungwirth, T. |
| author_facet | Kriegner, D. Výborný, K. Olejnik, K. Reichlová, H. Novák, V. Marti, X. Gazquez, J. Saidl, V. Němec, P. Volobuev, V.V. Springholz, G. Holy, Vaclav Jungwirth, T. |
| author_sort | Kriegner, D. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of common II–VI semiconductors. Favourable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying zero-field antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the writing magnetic field angle, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states, which we set by heat-assisted magneto recording and by changing the writing field direction. The multiple stability in our memory is ascribed to different distributions of domains with the Neel vector aligned along one of the three magnetic easy axes. The robustness against strong magnetic field perturbations combined with the multiple stability of the magnetic memory states are unique properties of antiferromagnets. |
| first_indexed | 2025-11-14T19:41:24Z |
| format | Article |
| id | nottingham-40283 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:41:24Z |
| publishDate | 2016 |
| publisher | Nature Publishing Group |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-402832020-05-04T17:57:13Z https://eprints.nottingham.ac.uk/40283/ Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe Kriegner, D. Výborný, K. Olejnik, K. Reichlová, H. Novák, V. Marti, X. Gazquez, J. Saidl, V. Němec, P. Volobuev, V.V. Springholz, G. Holy, Vaclav Jungwirth, T. Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of common II–VI semiconductors. Favourable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying zero-field antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the writing magnetic field angle, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states, which we set by heat-assisted magneto recording and by changing the writing field direction. The multiple stability in our memory is ascribed to different distributions of domains with the Neel vector aligned along one of the three magnetic easy axes. The robustness against strong magnetic field perturbations combined with the multiple stability of the magnetic memory states are unique properties of antiferromagnets. Nature Publishing Group 2016-06-09 Article PeerReviewed Kriegner, D., Výborný, K., Olejnik, K., Reichlová, H., Novák, V., Marti, X., Gazquez, J., Saidl, V., Němec, P., Volobuev, V.V., Springholz, G., Holy, Vaclav and Jungwirth, T. (2016) Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe. Nature Communications, 7 (11623). pp. 1-7. ISSN 2041-1723 http://www.nature.com/articles/ncomms11623 doi:10.1038/ncomms11623 doi:10.1038/ncomms11623 |
| spellingShingle | Kriegner, D. Výborný, K. Olejnik, K. Reichlová, H. Novák, V. Marti, X. Gazquez, J. Saidl, V. Němec, P. Volobuev, V.V. Springholz, G. Holy, Vaclav Jungwirth, T. Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe |
| title | Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe |
| title_full | Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe |
| title_fullStr | Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe |
| title_full_unstemmed | Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe |
| title_short | Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe |
| title_sort | multiple-stable anisotropic magnetoresistance memory in antiferromagnetic mnte |
| url | https://eprints.nottingham.ac.uk/40283/ https://eprints.nottingham.ac.uk/40283/ https://eprints.nottingham.ac.uk/40283/ |