Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources

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Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources

Plasma-assisted molecular beam epitaxy (PA-MBE) is now widely used for the growth of group III-nitrides. Many years ago it became clear that during PA-MBE there is unintentional doping of GaN with boron (B) due to decomposition of the pyrolytic boron nitride (PBN) cavity of the RF plasma source. In...

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Bibliographic Details
Main Authors:	Novikov, Sergei V., Foxon, C.T.
Format:	Article
Published:	Elsevier 2017
Subjects:	A3. Molecular beam epitaxy; B1. Nitrides; A1. Doping; B2. Semiconducting III–V materials
Online Access:	https://eprints.nottingham.ac.uk/39910/

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