Bipolar resistive switching of bi-layered Pt/Ta2O5/TaOx/Pt RRAM : physics-based modelling, circuit design and testing

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Bipolar resistive switching of bi-layered Pt/Ta2O5/TaOx/Pt RRAM : physics-based modelling, circuit design and testing

Over the last few years, the non-volatile memories (NVM) have been dominating the research of the storage elements. The resistance random-access memory (RRAM) and the memristor that employs the resistive switching (RS) mechanism appear to be potential candidates for NVM. Among the RS materials that...

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Bibliographic Details
Main Author:	Hatem, Firas Odai
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2017
Subjects:	Bi-layered RRAM resistive switching RRAM SPICE modeling tantalum oxide RRAM Ideality factor ion migration interface traps memristor semiconductor properties metal-insulator-semiconductor (MIS) tantalum oxide memristor tunneling current
Online Access:	https://eprints.nottingham.ac.uk/39786/

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