Silicon carbide MOSFETs in more electric aircraft power converters: the performance and reliability benefits over silicon IGBTs for a specified flight mission profile
This paper describes the design, construction and performance of a 5 kVA aviation power module containing silicon carbide MOSFETs. The function and control of this module within a commercial aviation power electrical control unit (ECU) application is explained and the power dissipation benefits from...
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| Format: | Conference or Workshop Item |
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2016
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| Online Access: | https://eprints.nottingham.ac.uk/39658/ |
| _version_ | 1848795885302972416 |
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| author | O'Donnell, Shane Debauche, Jean-Louis Wheeler, Patrick Castellazzi, Alberto |
| author_facet | O'Donnell, Shane Debauche, Jean-Louis Wheeler, Patrick Castellazzi, Alberto |
| author_sort | O'Donnell, Shane |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | This paper describes the design, construction and performance of a 5 kVA aviation power module containing silicon carbide MOSFETs. The function and control of this module within a commercial aviation power electrical control unit (ECU) application is explained and the power dissipation benefits from the use of these MOSFETs instead of silicon IGBTs when driving an electrical motor controlling an aileron are presented. The paper shows the calculated reliability figures for the power module in this application and an application-specific reliability test to verify 150,000 flight hours of module operation is introduced. Performance test results from a prototype unit are also presented. |
| first_indexed | 2025-11-14T19:39:12Z |
| format | Conference or Workshop Item |
| id | nottingham-39658 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:39:12Z |
| publishDate | 2016 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-396582020-05-04T18:13:27Z https://eprints.nottingham.ac.uk/39658/ Silicon carbide MOSFETs in more electric aircraft power converters: the performance and reliability benefits over silicon IGBTs for a specified flight mission profile O'Donnell, Shane Debauche, Jean-Louis Wheeler, Patrick Castellazzi, Alberto This paper describes the design, construction and performance of a 5 kVA aviation power module containing silicon carbide MOSFETs. The function and control of this module within a commercial aviation power electrical control unit (ECU) application is explained and the power dissipation benefits from the use of these MOSFETs instead of silicon IGBTs when driving an electrical motor controlling an aileron are presented. The paper shows the calculated reliability figures for the power module in this application and an application-specific reliability test to verify 150,000 flight hours of module operation is introduced. Performance test results from a prototype unit are also presented. 2016-09-06 Conference or Workshop Item PeerReviewed O'Donnell, Shane, Debauche, Jean-Louis, Wheeler, Patrick and Castellazzi, Alberto (2016) Silicon carbide MOSFETs in more electric aircraft power converters: the performance and reliability benefits over silicon IGBTs for a specified flight mission profile. In: 18th European Conference on Power Electronics and Applications, 5-9 September 2016, Karlsruhe, Germany. Aerospace IGBT Intelligent Power Module (IPM) Mission Profile Modelling MOSFET Power semiconductor device Reliability Silicon Carbide (SiC) Systems engineering Wide bandgap devices http://ieeexplore.ieee.org/document/7695504/ |
| spellingShingle | Aerospace IGBT Intelligent Power Module (IPM) Mission Profile Modelling MOSFET Power semiconductor device Reliability Silicon Carbide (SiC) Systems engineering Wide bandgap devices O'Donnell, Shane Debauche, Jean-Louis Wheeler, Patrick Castellazzi, Alberto Silicon carbide MOSFETs in more electric aircraft power converters: the performance and reliability benefits over silicon IGBTs for a specified flight mission profile |
| title | Silicon carbide MOSFETs in more electric aircraft power converters: the performance and reliability benefits over silicon IGBTs for a specified flight mission profile |
| title_full | Silicon carbide MOSFETs in more electric aircraft power converters: the performance and reliability benefits over silicon IGBTs for a specified flight mission profile |
| title_fullStr | Silicon carbide MOSFETs in more electric aircraft power converters: the performance and reliability benefits over silicon IGBTs for a specified flight mission profile |
| title_full_unstemmed | Silicon carbide MOSFETs in more electric aircraft power converters: the performance and reliability benefits over silicon IGBTs for a specified flight mission profile |
| title_short | Silicon carbide MOSFETs in more electric aircraft power converters: the performance and reliability benefits over silicon IGBTs for a specified flight mission profile |
| title_sort | silicon carbide mosfets in more electric aircraft power converters: the performance and reliability benefits over silicon igbts for a specified flight mission profile |
| topic | Aerospace IGBT Intelligent Power Module (IPM) Mission Profile Modelling MOSFET Power semiconductor device Reliability Silicon Carbide (SiC) Systems engineering Wide bandgap devices |
| url | https://eprints.nottingham.ac.uk/39658/ https://eprints.nottingham.ac.uk/39658/ |