Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with tem...

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Bibliographic Details
Main Authors: Al Saqri, Noor alhuda, Felix, Jorlandio F., Aziz, Mohsin, Kunets, Vasyl P., Jameel, Dler Adil, Taylor, David, Henini, M., Abd El-sadek, Mahmmoud S., Furrow, Colin, Ware, Morgan E., Benamara, Mourad, Mortazavi, Mansour, Salamo, Gregory
Format: Article
Published: IOP Publishing 2016
Subjects:
quantum wire intermediate-band solar cells
IV
C-V
DLTS
defect
Online Access:https://eprints.nottingham.ac.uk/39521/

Internet

https://eprints.nottingham.ac.uk/39521/

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