Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique
InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with tem...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
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IOP Publishing
2016
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| Online Access: | https://eprints.nottingham.ac.uk/39521/ |
| _version_ | 1848795856621273088 |
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| author | Al Saqri, Noor alhuda Felix, Jorlandio F. Aziz, Mohsin Kunets, Vasyl P. Jameel, Dler Adil Taylor, David Henini, M. Abd El-sadek, Mahmmoud S. Furrow, Colin Ware, Morgan E. Benamara, Mourad Mortazavi, Mansour Salamo, Gregory |
| author_facet | Al Saqri, Noor alhuda Felix, Jorlandio F. Aziz, Mohsin Kunets, Vasyl P. Jameel, Dler Adil Taylor, David Henini, M. Abd El-sadek, Mahmmoud S. Furrow, Colin Ware, Morgan E. Benamara, Mourad Mortazavi, Mansour Salamo, Gregory |
| author_sort | Al Saqri, Noor alhuda |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the traps detected in the QWr-doped devices are directly or indirectly related to the insertion of the Si δ-layer used to dope the wires. In addition, in the QWr-doped devices, the decrease of the solar conversion efficiencies at low temperatures and the associated decrease of the integrated external quantum efficiency through InGaAs could be attributed to detected traps E1QWR_D, E2QWR_D, and E3QWR_D with activation energies of 0.0037, 0.0053, and 0.041 eV, respectively. |
| first_indexed | 2025-11-14T19:38:44Z |
| format | Article |
| id | nottingham-39521 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:38:44Z |
| publishDate | 2016 |
| publisher | IOP Publishing |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-395212020-05-04T18:24:55Z https://eprints.nottingham.ac.uk/39521/ Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique Al Saqri, Noor alhuda Felix, Jorlandio F. Aziz, Mohsin Kunets, Vasyl P. Jameel, Dler Adil Taylor, David Henini, M. Abd El-sadek, Mahmmoud S. Furrow, Colin Ware, Morgan E. Benamara, Mourad Mortazavi, Mansour Salamo, Gregory InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the traps detected in the QWr-doped devices are directly or indirectly related to the insertion of the Si δ-layer used to dope the wires. In addition, in the QWr-doped devices, the decrease of the solar conversion efficiencies at low temperatures and the associated decrease of the integrated external quantum efficiency through InGaAs could be attributed to detected traps E1QWR_D, E2QWR_D, and E3QWR_D with activation energies of 0.0037, 0.0053, and 0.041 eV, respectively. IOP Publishing 2016-12-20 Article PeerReviewed Al Saqri, Noor alhuda, Felix, Jorlandio F., Aziz, Mohsin, Kunets, Vasyl P., Jameel, Dler Adil, Taylor, David, Henini, M., Abd El-sadek, Mahmmoud S., Furrow, Colin, Ware, Morgan E., Benamara, Mourad, Mortazavi, Mansour and Salamo, Gregory (2016) Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique. Nanotechnology, 28 (4). pp. 1-12. ISSN 1361-6528 quantum wire intermediate-band solar cells IV C-V DLTS defect http://iopscience.iop.org/article/10.1088/1361-6528/28/4/045707/meta;jsessionid=48CD1C55ABE819A3898D49153FEECE90.c4.iopscience.cld.iop.org doi:10.1088/1361-6528/28/4/045707 doi:10.1088/1361-6528/28/4/045707 |
| spellingShingle | quantum wire intermediate-band solar cells IV C-V DLTS defect Al Saqri, Noor alhuda Felix, Jorlandio F. Aziz, Mohsin Kunets, Vasyl P. Jameel, Dler Adil Taylor, David Henini, M. Abd El-sadek, Mahmmoud S. Furrow, Colin Ware, Morgan E. Benamara, Mourad Mortazavi, Mansour Salamo, Gregory Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique |
| title | Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique |
| title_full | Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique |
| title_fullStr | Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique |
| title_full_unstemmed | Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique |
| title_short | Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique |
| title_sort | investigation of electrically active defects in ingaas quantum wire intermediate-band solar cells using deep-level transient spectroscopy (dlts) technique |
| topic | quantum wire intermediate-band solar cells IV C-V DLTS defect |
| url | https://eprints.nottingham.ac.uk/39521/ https://eprints.nottingham.ac.uk/39521/ https://eprints.nottingham.ac.uk/39521/ |