Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes

QR Code

Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes

We have investigated the polarization-resolved electroluminescence (EL) of a p–i–n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an effic...

Full description

Bibliographic Details
Main Authors:	Rodrigues, D.H., Brasil, M.J.S.P., Orlita, M., Kunc, J., Galeti, H.V.A., Henini, M., Taylor, D., H.V.A., Y.G.
Format:	Article
Published:	IOP Publishing 2016
Online Access:	https://eprints.nottingham.ac.uk/39519/

Similar Items

Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices
by: Gordo, V. Orsi, et al.
Published: (2017)

Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes
by: Galeti, H.V.A., et al.
Published: (2018)

Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
by: Prando, G.A., et al.
Published: (2018)

Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature
by: Bhunia, Amit, et al.
Published: (2018)

Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy
by: Fay, Mike W., et al.
Published: (2005)

Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High-Index GaAs Planes
by: Gunes, Mustafa, et al.
Published: (2017)

Distribution of ga vacancies in Zn diffused GaAs
by: Zahari Mohamed Darus,, et al.
Published: (1992)

Initial stages of GaAs/Au eutectic alloy formation for the growth of GaAs nanowires
by: Rosnita, M, et al.
Published: (2012)

Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs
by: Fay, Mike W., et al.
Published: (2008)

The electron-phonon interaction in GaAs/(AlGa)As quantum wells
by: Cross, Andrew John
Published: (2001)

Dual-wavelength generation with terahertz spacing using GaAs–AlGaAs microring resonator waveguides
by: Sarrigani, G. V., et al.
Published: (2017)

Self-healing in fractured GaAs nanowires
by: Wang, Jun, et al.
Published: (2012)

Experimental Study Of InGaP/GaAs DHBTS With Composite Collector
by: Poh, Zi-Song
Published: (2009)

Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors
by: Poh, Z. S., et al.
Published: (2007)

Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes
by: Filali, Walid, et al.
Published: (2017)

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations
by: Jameel, D.A., et al.
Published: (2016)

An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode
by: Maricar, Mohamed Ismaeel, et al.
Published: (2018)

Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux
by: Han, Y., et al.
Published: (2005)

Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots
by: Wahab, Yussof, et al.
Published: (2006)

Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
by: Wahab, Yussof, et al.
Published: (2006)

Self-healing of GaAs nanowires: An atomistic study
by: Wang, Jun, et al.
Published: (2012)

Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2013)

Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings
by: Ahmad Kamarudin, Mazliana, et al.
Published: (2011)

Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.
by: Zainal, Norzaini
Published: (2016)

Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device
by: Parimon, Norfarariyanti, et al.
Published: (2008)

Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/ GaAs quantum dots
by: Delgado, N. Fernandez, et al.
Published: (2016)

Conversion Efficiency Improvement in GaAs Solar Cells
by: Das, Narottam, et al.
Published: (2014)

Thermal stablity of heavily carbon-doped GaAs
by: Meng , Suan Uang, et al.
Published: (2004)

An analytical study of current-voltage characteristics and breakdown performance of GaInP∕GaAs composite collector double heterojunction bipolar transistor
by: Goh, Y. L., et al.
Published: (2004)

Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings
by: Hodgson, Peter D., et al.
Published: (2013)

An analysis of the electron trajectory in the vicinity of GaAs quantum dot
by: Hanafi Ithnin,, et al.
Published: (2014)

Photoluminescence and raman scattering of GaAs1-xBix alloy
by: L. Hasanah,, et al.
Published: (2020)

Avalanche Multiplication and Excess Noise in Thin Heterojunction AlxGa1_xAs/GaAs Avalanche Photodiodes
by: Low, Lay Chen
Published: (2010)

Output power limitations and improvements in passively mode locked GaAs/AlGaAs quantum well lasers
by: Tandoi, G., et al.
Published: (2012)

Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
by: Fernández-Delgado, Natalia, et al.
Published: (2017)

Design of a low noise amplifier with GaAs MESFET at Ku-Band
by: Islam, Md. Rafiqul, et al.
Published: (2010)

Light absorption and reflection in nanostructured GaAs metal-semiconductor-metal photodetectors
by: Das, Narottam, et al.
Published: (2014)

Quantitative estimates of the variations of refractive index and gain with carrier density in GaAs/GaAIAs semiconductor injection lasers
by: Poh, B. S.
Published: (1984)

Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator
by: Taib, M. lkram Md, et al.
Published: (2015)

Analytical investigation of dead space effect under near-breakdown conditions in GaInP/GaAs composite double heterojunction bipolar transistors
by: GOH, Y, et al.
Published: (2004)