Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes
We have investigated the polarization-resolved electroluminescence (EL) of a p–i–n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an effic...
| Main Authors: | , , , , , , , |
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| Format: | Article |
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IOP Publishing
2016
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| Online Access: | https://eprints.nottingham.ac.uk/39519/ |
| _version_ | 1848795856031973376 |
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| author | Rodrigues, D.H. Brasil, M.J.S.P. Orlita, M. Kunc, J. Galeti, H.V.A. Henini, M. Taylor, D. H.V.A., Y.G. |
| author_facet | Rodrigues, D.H. Brasil, M.J.S.P. Orlita, M. Kunc, J. Galeti, H.V.A. Henini, M. Taylor, D. H.V.A., Y.G. |
| author_sort | Rodrigues, D.H. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | We have investigated the polarization-resolved electroluminescence (EL) of a p–i–n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices. |
| first_indexed | 2025-11-14T19:38:44Z |
| format | Article |
| id | nottingham-39519 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:38:44Z |
| publishDate | 2016 |
| publisher | IOP Publishing |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-395192020-05-04T17:40:43Z https://eprints.nottingham.ac.uk/39519/ Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes Rodrigues, D.H. Brasil, M.J.S.P. Orlita, M. Kunc, J. Galeti, H.V.A. Henini, M. Taylor, D. H.V.A., Y.G. We have investigated the polarization-resolved electroluminescence (EL) of a p–i–n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices. IOP Publishing 2016-03-24 Article PeerReviewed Rodrigues, D.H., Brasil, M.J.S.P., Orlita, M., Kunc, J., Galeti, H.V.A., Henini, M., Taylor, D. and H.V.A., Y.G. (2016) Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes. Journal of Physics D: Applied Physics, 49 (16). ISSN 1361-6463 http://iopscience.iop.org/article/10.1088/0022-3727/49/16/165104/meta doi:10.1088/0022-3727/49/16/165104 doi:10.1088/0022-3727/49/16/165104 |
| spellingShingle | Rodrigues, D.H. Brasil, M.J.S.P. Orlita, M. Kunc, J. Galeti, H.V.A. Henini, M. Taylor, D. H.V.A., Y.G. Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes |
| title | Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes |
| title_full | Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes |
| title_fullStr | Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes |
| title_full_unstemmed | Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes |
| title_short | Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes |
| title_sort | hole spin injection from a gamnas layer into gaas-alas-ingaas resonant tunneling diodes |
| url | https://eprints.nottingham.ac.uk/39519/ https://eprints.nottingham.ac.uk/39519/ https://eprints.nottingham.ac.uk/39519/ |