Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes
We have investigated the polarization-resolved electroluminescence (EL) of a p–i–n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an effic...
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Bibliographic Details
| Main Authors: |
Rodrigues, D.H.,
Brasil, M.J.S.P.,
Orlita, M.,
Kunc, J.,
Galeti, H.V.A.,
Henini, M.,
Taylor, D.,
H.V.A., Y.G. |
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| Format: | Article
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| Published: |
IOP Publishing
2016
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| Online Access: | https://eprints.nottingham.ac.uk/39519/
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