Developing power semiconductor device model for virtual prototyping of power electronics systems
Virtual prototyping (VP) is very important for power electronics systems design. A virtual prototyping design tool based on different modelling technology and model order reduction is proposed in the paper. In order to combine circuit electromagnetic model with power semiconductor device models, a S...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
2016
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| Online Access: | https://eprints.nottingham.ac.uk/38779/ |
| _version_ | 1848795689394372608 |
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| author | Li, Ke Evans, Paul Johnson, Christopher Mark |
| author_facet | Li, Ke Evans, Paul Johnson, Christopher Mark |
| author_sort | Li, Ke |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Virtual prototyping (VP) is very important for power electronics systems design. A virtual prototyping design tool based on different modelling technology and model order reduction is proposed in the paper. In order to combine circuit electromagnetic model with power semiconductor device models, a SiC-JFET behavioural model is presented and implemented in the design tool. A half bridge circuit using SiC-JFET devices is thus represented in the VP software. The presented SiC-JFET behavioural model is then validated by comparing with experimental measurements on switching waveforms. |
| first_indexed | 2025-11-14T19:36:05Z |
| format | Conference or Workshop Item |
| id | nottingham-38779 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:36:05Z |
| publishDate | 2016 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-387792020-05-04T18:16:39Z https://eprints.nottingham.ac.uk/38779/ Developing power semiconductor device model for virtual prototyping of power electronics systems Li, Ke Evans, Paul Johnson, Christopher Mark Virtual prototyping (VP) is very important for power electronics systems design. A virtual prototyping design tool based on different modelling technology and model order reduction is proposed in the paper. In order to combine circuit electromagnetic model with power semiconductor device models, a SiC-JFET behavioural model is presented and implemented in the design tool. A half bridge circuit using SiC-JFET devices is thus represented in the VP software. The presented SiC-JFET behavioural model is then validated by comparing with experimental measurements on switching waveforms. 2016-10-18 Conference or Workshop Item PeerReviewed Li, Ke, Evans, Paul and Johnson, Christopher Mark (2016) Developing power semiconductor device model for virtual prototyping of power electronics systems. In: 13th IEEE Vehicle Power and Propulsion Conference (VPPC 2016), 17-20 Oct 2016, Hangzhou, China. Virtual prototyping; Model order reduction; Power semiconductor device modelling; Behavioural model; Switching waveforms http://ieeexplore.ieee.org/document/7791664/ |
| spellingShingle | Virtual prototyping; Model order reduction; Power semiconductor device modelling; Behavioural model; Switching waveforms Li, Ke Evans, Paul Johnson, Christopher Mark Developing power semiconductor device model for virtual prototyping of power electronics systems |
| title | Developing power semiconductor device model for
virtual prototyping of power electronics systems |
| title_full | Developing power semiconductor device model for
virtual prototyping of power electronics systems |
| title_fullStr | Developing power semiconductor device model for
virtual prototyping of power electronics systems |
| title_full_unstemmed | Developing power semiconductor device model for
virtual prototyping of power electronics systems |
| title_short | Developing power semiconductor device model for
virtual prototyping of power electronics systems |
| title_sort | developing power semiconductor device model for
virtual prototyping of power electronics systems |
| topic | Virtual prototyping; Model order reduction; Power semiconductor device modelling; Behavioural model; Switching waveforms |
| url | https://eprints.nottingham.ac.uk/38779/ https://eprints.nottingham.ac.uk/38779/ |