Reliable integration of a high performance multi-chip half-bridge SiC power module

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Reliable integration of a high performance multi-chip half-bridge SiC power module

Silicon carbide (SiC) devices have been adopted to push the boundaries further in terms of power density, conversion efficiency, switching speed or thermal capability. To have the benefit of such semiconductors, new packaging should be developed to meet all the advantages. In this paper, we present...

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Bibliographic Details
Main Authors:	Mouawad, Bassem, Li, Jianfeng, Castellazzi, Alberto, Johnson, Christopher Mark
Format:	Conference or Workshop Item
Published:	2016
Online Access:	https://eprints.nottingham.ac.uk/37317/

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