Reliable integration of a high performance multi-chip half-bridge SiC power module
Silicon carbide (SiC) devices have been adopted to push the boundaries further in terms of power density, conversion efficiency, switching speed or thermal capability. To have the benefit of such semiconductors, new packaging should be developed to meet all the advantages. In this paper, we present...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2016
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| Online Access: | https://eprints.nottingham.ac.uk/37317/ |
| _version_ | 1848795433579577344 |
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| author | Mouawad, Bassem Li, Jianfeng Castellazzi, Alberto Johnson, Christopher Mark |
| author_facet | Mouawad, Bassem Li, Jianfeng Castellazzi, Alberto Johnson, Christopher Mark |
| author_sort | Mouawad, Bassem |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Silicon carbide (SiC) devices have been adopted to push the boundaries further in terms of power density, conversion efficiency, switching speed or thermal capability. To have the benefit of such semiconductors, new packaging should be developed to meet all the advantages. In this paper, we present a reliable integrated concept of a new packaging solution for multi-chip SiC devices aiming to have a very low parasitic inductance in order to have high switching frequencies and ensure a good reliability for long-term operation. |
| first_indexed | 2025-11-14T19:32:01Z |
| format | Conference or Workshop Item |
| id | nottingham-37317 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:32:01Z |
| publishDate | 2016 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-373172020-05-04T17:47:18Z https://eprints.nottingham.ac.uk/37317/ Reliable integration of a high performance multi-chip half-bridge SiC power module Mouawad, Bassem Li, Jianfeng Castellazzi, Alberto Johnson, Christopher Mark Silicon carbide (SiC) devices have been adopted to push the boundaries further in terms of power density, conversion efficiency, switching speed or thermal capability. To have the benefit of such semiconductors, new packaging should be developed to meet all the advantages. In this paper, we present a reliable integrated concept of a new packaging solution for multi-chip SiC devices aiming to have a very low parasitic inductance in order to have high switching frequencies and ensure a good reliability for long-term operation. 2016-04-08 Conference or Workshop Item PeerReviewed Mouawad, Bassem, Li, Jianfeng, Castellazzi, Alberto and Johnson, Christopher Mark (2016) Reliable integration of a high performance multi-chip half-bridge SiC power module. In: 6th Electronics System-Integration Technology Conference (ESTC’16), 13-16 Sept. 2016, Grenoble, France. |
| spellingShingle | Mouawad, Bassem Li, Jianfeng Castellazzi, Alberto Johnson, Christopher Mark Reliable integration of a high performance multi-chip half-bridge SiC power module |
| title | Reliable integration of a high performance multi-chip half-bridge SiC power module |
| title_full | Reliable integration of a high performance multi-chip half-bridge SiC power module |
| title_fullStr | Reliable integration of a high performance multi-chip half-bridge SiC power module |
| title_full_unstemmed | Reliable integration of a high performance multi-chip half-bridge SiC power module |
| title_short | Reliable integration of a high performance multi-chip half-bridge SiC power module |
| title_sort | reliable integration of a high performance multi-chip half-bridge sic power module |
| url | https://eprints.nottingham.ac.uk/37317/ |