Hexagonal boron nitride tunnel barriers grown on graphite by high temperature molecular beam epitaxy
We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
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Nature Publishing Group
2016
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| Online Access: | https://eprints.nottingham.ac.uk/37309/ |
| _version_ | 1848795431597768704 |
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| author | Cho, Yong-Jin Summerfield, Alex Davies, Andrew Cheng, Tin S. Smith, Emily F. Mellor, Christopher J. Khlobystov, Andrei N. Foxon, C. Thomas Eaves, Laurence Beton, Peter H. Novikov, Sergei V. |
| author_facet | Cho, Yong-Jin Summerfield, Alex Davies, Andrew Cheng, Tin S. Smith, Emily F. Mellor, Christopher J. Khlobystov, Andrei N. Foxon, C. Thomas Eaves, Laurence Beton, Peter H. Novikov, Sergei V. |
| author_sort | Cho, Yong-Jin |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate. |
| first_indexed | 2025-11-14T19:31:59Z |
| format | Article |
| id | nottingham-37309 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T19:31:59Z |
| publishDate | 2016 |
| publisher | Nature Publishing Group |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-373092020-05-04T18:09:09Z https://eprints.nottingham.ac.uk/37309/ Hexagonal boron nitride tunnel barriers grown on graphite by high temperature molecular beam epitaxy Cho, Yong-Jin Summerfield, Alex Davies, Andrew Cheng, Tin S. Smith, Emily F. Mellor, Christopher J. Khlobystov, Andrei N. Foxon, C. Thomas Eaves, Laurence Beton, Peter H. Novikov, Sergei V. We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate. Nature Publishing Group 2016-09-29 Article PeerReviewed Cho, Yong-Jin, Summerfield, Alex, Davies, Andrew, Cheng, Tin S., Smith, Emily F., Mellor, Christopher J., Khlobystov, Andrei N., Foxon, C. Thomas, Eaves, Laurence, Beton, Peter H. and Novikov, Sergei V. (2016) Hexagonal boron nitride tunnel barriers grown on graphite by high temperature molecular beam epitaxy. Scientific Reports, 6 . 34474/1-34474/6. ISSN 2045-2322 http://www.nature.com/articles/srep34474 doi:10.1038/srep34474 doi:10.1038/srep34474 |
| spellingShingle | Cho, Yong-Jin Summerfield, Alex Davies, Andrew Cheng, Tin S. Smith, Emily F. Mellor, Christopher J. Khlobystov, Andrei N. Foxon, C. Thomas Eaves, Laurence Beton, Peter H. Novikov, Sergei V. Hexagonal boron nitride tunnel barriers grown on graphite by high temperature molecular beam epitaxy |
| title | Hexagonal boron nitride tunnel barriers grown on graphite by high temperature molecular beam epitaxy |
| title_full | Hexagonal boron nitride tunnel barriers grown on graphite by high temperature molecular beam epitaxy |
| title_fullStr | Hexagonal boron nitride tunnel barriers grown on graphite by high temperature molecular beam epitaxy |
| title_full_unstemmed | Hexagonal boron nitride tunnel barriers grown on graphite by high temperature molecular beam epitaxy |
| title_short | Hexagonal boron nitride tunnel barriers grown on graphite by high temperature molecular beam epitaxy |
| title_sort | hexagonal boron nitride tunnel barriers grown on graphite by high temperature molecular beam epitaxy |
| url | https://eprints.nottingham.ac.uk/37309/ https://eprints.nottingham.ac.uk/37309/ https://eprints.nottingham.ac.uk/37309/ |