Single-phase T-Type inverter performance benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs

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Single-phase T-Type inverter performance benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs

In this paper, benchmark of Si IGBT, SiC MOSFET and GaN HEMT power switches at 600V class is conducted in single-phase T-type inverter. Gate driver requirements, switching performance, inverter efficiency performance, heat sink volume, output filter volume and dead-time effect for each technology is...

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Bibliographic Details
Main Authors:	Gurpinar, Emre, Castellazzi, Alberto
Format:	Article
Published:	IEEE 2015
Subjects:	Multilevel systems Power conversion Power electronics Power MOSFETs Insulated Gate Bipolar Transis¬tors Power Semiconductor Switches Inverters.
Online Access:	https://eprints.nottingham.ac.uk/36375/

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