Influence of design parameters on the short-circuit
ruggedness of SiC Power MOSFETs

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Influence of design parameters on the short-circuit ruggedness of SiC Power MOSFETs

This work aims to present an investigation on short-circuit (SC) failure behaviour of SiC Power MOSFETs due to the onset of thermal runaway. As inferable from experimental outcomes, it is related to the formation of hotspot, whose exact location is mainly unpredictable and dictated by device structu...

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Bibliographic Details
Main Authors:	Romano, Gianpaolo, Riccio, Michele, Maresca, Luca, Fayyaz, Asad, Castellazzi, Alberto
Format:	Conference or Workshop Item
Published:	2016
Subjects:	Silicon Carbide (SiC) Power MOSFET; Short-circuit failure; Short-Circuit ruggedness; Thermal Runaway; hot-spot; TCAD 2D simulation
Online Access:	https://eprints.nottingham.ac.uk/36365/

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